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BF120晶體管資料
BF120別名:BF120三極管、BF120晶體管、BF120晶體三極管
BF120生產(chǎn)廠家:德國(guó)欏茨標(biāo)準(zhǔn)電器公司
BF120制作材料:Si-NPN
BF120性質(zhì):電視 (TV)_行輸出 (HA)_振蕩級(jí) (O)
BF120封裝形式:直插封裝
BF120極限工作電壓:220V
BF120最大電流允許值:0.05A
BF120最大工作頻率:<1MHZ或未知
BF120引腳數(shù):3
BF120最大耗散功率:0.3W
BF120放大倍數(shù):
BF120圖片代號(hào):D-8
BF120vtest:220
BF120htest:999900
- BF120atest:0.05
BF120wtest:0.3
BF120代換 BF120用什么型號(hào)代替:BF298,BF299,BF258,BF259,BF337,BF422,BF658,3DG170J,
BF120價(jià)格
參考價(jià)格:¥0.2860
型號(hào):BF1201R 品牌:NXP/PHILIPS 備注:這里有BF120多少錢,2025年最近7天走勢(shì),今日出價(jià),今日競(jìng)價(jià),BF120批發(fā)/采購(gòu)報(bào)價(jià),BF120行情走勢(shì)銷售排行榜,BF120報(bào)價(jià)。型號(hào) | 功能描述 | 生產(chǎn)廠家 企業(yè) | LOGO | 操作 |
---|---|---|---|---|
BF120 | 2.0mm Pitch Pin Header Dual Row, Surface Mount 文件:116.1 Kbytes Page:1 Pages | GCT | ||
N-channel dual-gate PoLo MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飛利浦 | |||
RF Manual 16th edition | ETC 知名廠家 | ETC | ||
RF Manual 16th edition | ETC 知名廠家 | ETC | ||
N-channel dual-gate PoLo MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飛利浦 | |||
N-channel dual-gate PoLo MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飛利浦 | |||
RF Manual 16th edition | ETC 知名廠家 | ETC | ||
N-channel dual-gate PoLo MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飛利浦 | |||
RF Manual 16th edition | ETC 知名廠家 | ETC | ||
N-channel dual-gate PoLo MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飛利浦 | |||
RF Manual 16th edition | ETC 知名廠家 | ETC | ||
RF Manual 16th edition | ETC 知名廠家 | ETC | ||
N-channel dual-gate PoLo MOS-FETs DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1202, BF1202R and BF1202WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package | Philips 飛利浦 | |||
Dual N-channel dual gate MOS-FET DESCRIPTION The BF1203 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes betwe | Philips 飛利浦 | |||
RF Manual 16th edition | ETC 知名廠家 | ETC | ||
Dual N-channel dual gate MOS-FET DESCRIPTION The BF1204 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between t | Philips 飛利浦 | |||
RF Manual 16th edition | ETC 知名廠家 | ETC | ||
Dual N-channel dual gate MOS-FET DESCRIPTION The BF1205 is a combination of two equal dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal bias circuits enable DC stabil | Philips 飛利浦 | |||
Dual N-channel dual gate MOS-FET General description The BF1205C is a combination of two dual gate MOS-FET amplifiers with shared source and gate 2 leads and an integrated switch. The integrated switch is operated by the gate 1 bias of amplifier b. The source and substrate are interconnected. Internal bias circuits enable DC st | Philips 飛利浦 | |||
Dual N-channel dual-gate MOS-FET DESCRIPTION The BF1206 is a combination of two different dual gate MOS-FET amplifiers with shared source and gate 2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross-modulation performance during AGC. Integrated diodes between | Philips 飛利浦 | |||
RF Manual 16th edition | ETC 知名廠家 | ETC | ||
Dual N-channel dual gate MOSFET General description The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable Direct Current (DC) stabilization and a very good cross-modulation performance during Autom | Philips 飛利浦 | |||
Dual N-channel dual gate MOSFET General description The BF1207 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. Features ■ Two low noise gain controlled amplifiers in a single package. One with a fully integrated bias and one with partly integrated bias ■ Intern | Philips 飛利浦 | |||
RF Manual 16th edition | ETC 知名廠家 | ETC | ||
RF Manual 16th edition | ETC 知名廠家 | ETC | ||
Dual N-channel dual gate MOSFET General description The BF1208 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabil | Philips 飛利浦 | |||
Dual N-channel dual gate MOSFET General description The BF1208D is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The source and substrate are interconnected. Internal bias circuits enable DC stabi | Philips 飛利浦 | |||
RF Manual 16th edition | ETC 知名廠家 | ETC | ||
中頻濾波器 | SHOULDERShoulder 好達(dá)電子無錫市好達(dá)電子股份有限公司 | |||
N-channel dual-gate PoLo MOS-FETs | ETC 知名廠家 | ETC | ||
N-channel dual-gate PoLo MOS-FETs 文件:127.23 Kbytes Page:16 Pages | JMNIC 錦美電子 | |||
N-channel dual-gate PoLo MOS-FETs 文件:127.23 Kbytes Page:16 Pages | JMNIC 錦美電子 | |||
波導(dǎo)負(fù)載 | ETC 知名廠家 | ETC | ||
封裝/外殼:SOT-143R 包裝:卷帶(TR) 描述:MOSFET 2N-CH 10V 30MA SOT143R 分立半導(dǎo)體產(chǎn)品 晶體管 - FET,MOSFET - 射頻 | ETC 知名廠家 | ETC | ||
封裝/外殼:SC-82A,SOT-343 包裝:卷帶(TR)剪切帶(CT)Digi-Reel? 得捷定制卷帶 描述:MOSFET 2N-CH 10V 30MA SOT343R 分立半導(dǎo)體產(chǎn)品 晶體管 - FET,MOSFET - 射頻 | ETC 知名廠家 | ETC | ||
N-channel dual-gate PoLo MOS-FETs | ETC 知名廠家 | ETC | ||
N-channel dual-gate PoLo MOS-FETs | ETC 知名廠家 | ETC | ||
N-channel dual-gate PoLo MOS-FETs | ETC 知名廠家 | ETC | ||
N-channel dual-gate PoLo MOS-FETs 文件:129.289 Kbytes Page:16 Pages | JMNIC 錦美電子 | |||
N-channel dual-gate PoLo MOS-FETs 文件:129.289 Kbytes Page:16 Pages | JMNIC 錦美電子 | |||
N-channel dual-gate PoLo MOS-FETs | ETC 知名廠家 | ETC | ||
N-channel dual-gate PoLo MOS-FETs | ETC 知名廠家 | ETC | ||
N-channel dual-gate PoLo MOS-FETs | ETC 知名廠家 | ETC | ||
N-channel dual-gate PoLo MOS-FETs | ETC 知名廠家 | ETC | ||
Dual N-channel dual gate MOS-FETs 文件:172.69 Kbytes Page:20 Pages | JMNIC 錦美電子 | |||
Dual N-channel dual gate MOS-FETs 文件:172.69 Kbytes Page:20 Pages | JMNIC 錦美電子 | |||
Dual N-channel dual gate MOS-FET 文件:172.69 Kbytes Page:20 Pages | JMNIC 錦美電子 | |||
DC Blower Fan 120x120x32mm 文件:399.56 Kbytes Page:1 Pages | COOLCOX 奇凌電子 | |||
DC Blower Fan 120x120x32mm 文件:399.56 Kbytes Page:1 Pages | COOLCOX 奇凌電子 | |||
DC Blower Fan 120x120x32mm 文件:399.56 Kbytes Page:1 Pages | COOLCOX 奇凌電子 | |||
DC Blower Fan 120x120x32mm 文件:399.56 Kbytes Page:1 Pages | COOLCOX 奇凌電子 | |||
DC Blower Fan 120x120x32mm 文件:399.56 Kbytes Page:1 Pages | COOLCOX 奇凌電子 | |||
DC Blower Fan 120x120x32mm 文件:399.56 Kbytes Page:1 Pages | COOLCOX 奇凌電子 | |||
DC Blower Fan 120x120x32mm 文件:399.56 Kbytes Page:1 Pages | COOLCOX 奇凌電子 | |||
DC Blower Fan 120x120x32mm 文件:399.56 Kbytes Page:1 Pages | COOLCOX 奇凌電子 | |||
DC Blower Fan 120x120x32mm 文件:399.56 Kbytes Page:1 Pages | COOLCOX 奇凌電子 | |||
DC Blower Fan 120x120x32mm 文件:399.56 Kbytes Page:1 Pages | COOLCOX 奇凌電子 | |||
DC Blower Fan 120x120x32mm 文件:399.56 Kbytes Page:1 Pages | COOLCOX 奇凌電子 | |||
DC Blower Fan 120x120x32mm 文件:399.56 Kbytes Page:1 Pages | COOLCOX 奇凌電子 | |||
DC Blower Fan 120x120x32mm 文件:399.56 Kbytes Page:1 Pages | COOLCOX 奇凌電子 |
BF120產(chǎn)品屬性
- 類型
描述
- 型號(hào)
BF120
- 制造商
Siemens
IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
PHI |
2016+ |
SOT363 |
6000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
|||
PHI |
25+ |
SOT143 |
3000 |
全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售 |
|||
恩XP |
23+ |
SOT-363 |
100586 |
全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)! |
|||
恩XP |
2430+ |
SOT363 |
8540 |
只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!! |
|||
PHI |
23+ |
SOT143 |
12300 |
||||
恩XP |
24+ |
SOT-143 |
80000 |
只做自己庫(kù)存 全新原裝進(jìn)口正品假一賠百 可開13%增 |
|||
恩XP |
24+ |
SOT-343 |
33500 |
全新進(jìn)口原裝現(xiàn)貨,假一罰十 |
|||
恩XP |
23+ |
N/A |
12000 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
|||
恩XP |
25+ |
SOT-343 |
33422 |
NXP/恩智浦全新特價(jià)BF1201WR即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
|||
恩XP |
24+ |
標(biāo)準(zhǔn)封裝 |
20727 |
全新原裝正品/價(jià)格優(yōu)惠/質(zhì)量保障 |
BF120芯片相關(guān)品牌
BF120規(guī)格書下載地址
BF120參數(shù)引腳圖相關(guān)
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- BDY99
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BF120數(shù)據(jù)表相關(guān)新聞
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JFET - 25 V 射頻結(jié)柵場(chǎng)效應(yīng)晶體管(RF JFET)晶體管 , SMD/SMT 射頻結(jié)柵場(chǎng)效應(yīng)晶體管(RF JFET)晶體管 , JFET 射頻結(jié)柵場(chǎng)效應(yīng)晶體管(RF JFET)晶體管 , GaN SiC SMD/SMT 射頻結(jié)柵場(chǎng)效應(yīng)晶體管(RF JFET)晶體管 , JFET N-Channel 射頻結(jié)柵場(chǎng)效應(yīng)晶體管(RF JFET)晶體管 , MESFET 射
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DdatasheetPDF頁(yè)碼索引
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