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NPN Silicon AF Transistors

NPN Silicon AF Transistors ? For AF driver and output stages ? High collector current ? Low collector-emitter saturation voltage ? Complementary types: BCP51 ... BCP53 (PNP)

NPN Silicon AF Transistors

NPN Silicon AF Transistors ? For AF driver and output stages ? High collector current ? Low collector-emitter saturation voltage ? Complementary types: BCP51...BCP53 (PNP) ? Pb-free (RoHS compliant) package ? Qualified according AEC Q101

NPN medium power transistors

DESCRIPTION NPN medium power transistor in a SOT223 plastic package. PNP complements: BCP51, BCP52 and BCP53. FEATURES ? High current (max. 1 A) ? Low voltage (max. 80 V). APPLICATIONS ? Switching.

1A , 60V NPN Silicon Medium Power Transistor

FEATURES ? For AF driver and output stages ? High collector current ? Low collector-emitter saturation voltage

NPN Silicon AF Transistors (For AF driver and output stages High collector current)

●For AF driver and output stages ●High collector current ●Low collector-emitter saturation voltage ●Complementary types: BCP 51 … BCP 53 (PNP)

60 V, 1 A NPN medium power transistors

Features and benefits ? High current ? Three current gain selections ? High power dissipation capability ? Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) ? Leadless very small SMD plastic package with medium power capability (SOT1061) ? AEC-Q101 qualified

NPN Silicon Epitaxial Planar Transistor

Features High Collector Current Low Collector-emitter Saturation Voltage

NPN Silicon AF Transistors

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NPN Plastic-Encapsulate Transistors

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小信號雙極型晶體管

PNP Silicon Epitaxial Planar Transistor

60 V, 1 A NPN medium power transistor

NPN Silicon Medium Power Transistor

FEATURES ? For AF Driver and Output Stages ? High Collector Current ? Low Collector-Emitter Saturation Voltage

60 V, 1 A NPN medium power transistors

Features and benefits ? High current ? Three current gain selections ? High power dissipation capability ? Qualified according to AEC-Q101 and recommended for use in automotive applications

60 V, 1 A PNP medium power transistors

Features and benefits ? High collector current capability IC and ICM ? Three current gain selections ? High power dissipation capability ? AEC-Q101 qualified

60 V, 1 A NPN medium power transistors

Features and benefits ? High collector current capability IC and ICM ? Three current gain selections ? High power dissipation capability ? AEC-Q101 qualified

封裝/外殼：TO-261-4，TO-261AA 包裝：卷帶（TR）剪切帶（CT）Digi-Reel? 得捷定制卷帶 描述：TRANS NPN 60V 1A SOT223 分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個

封裝/外殼：TO-261-4，TO-261AA 包裝：散裝 描述：TRANS NPN 60V 1A SOT223 分立半導體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個

60 V, 1 A NPN medium power transistors

Features and benefits ? High current ? Three current gain selections ? High power dissipation capability ? Exposed heatsink for excellent thermal and electrical conductivity ? Leadless very small SMD plastic package with medium power capability ? AEC-Q101 qualified

60 V, 1 A NPN medium power transistors

Features and benefits ? High current ? Three current gain selections ? High power dissipation capability ? Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061) ? Leadless very small SMD plastic package with medium power capability (SOT1061) ? AEC-Q101 qualified

45V/60V/80V, 1A NPN medium power transistors

Features and benefits * High collector current capability IC and ICM * Three current gain selections * Reduced Printed-Circuit Board (PCB) area requirements * Leadless very small SMD plastic package with medium power capability * Exposed heat sink for excellent thermal and electrical cond

60 V, 1 A NPN medium power transistors

1. General description NPN medium power transistor series encapsulated in an ultra thin DFN2020D-3 (SOT1061D) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and visible and solderable side pads. 2. Features and benefits ? High collector current capa

45V/60V/80V, 1A NPN medium power transistors

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