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OptiMOSTM3 Power-Transistor

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC1) for target application ? Ideal for high-frequency switching and synchr

OptiMOSTM3 Power-Transistor

Features ? N-channel, normal level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? 175 °C operating temperature ? Pb-free lead plating; RoHS compliant ? Qualified according to JEDEC1) for target application ? Ideal for high-frequency switching and synchr

MOSFET - Power, Single N-Channel, u8FL 100 V, 30 m, 35 A

Features ? Wide SOA for Linear Mode Operation ? Low RDS(on) to Minimize Conduction Losses ? High Peak UIS Current Capability for Ruggedness ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications ?