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AT28BV64B價(jià)格
參考價(jià)格:¥19.5361
型號(hào):AT28BV64B-20JU 品牌:Atmel 備注:這里有AT28BV64B多少錢,2025年最近7天走勢(shì),今日出價(jià),今日競(jìng)價(jià),AT28BV64B批發(fā)/采購(gòu)報(bào)價(jià),AT28BV64B行情走勢(shì)銷售排行榜,AT28BV64B報(bào)價(jià)。型號(hào) | 功能描述 | 生產(chǎn)廠家 企業(yè) | LOGO | 操作 |
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AT28BV64B | 64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | ||
AT28BV64B | 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件:367.88 Kbytes Page:17 Pages | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | ||
AT28BV64B | Battery-Voltage 64Kb (8Kbit x 8) Parallel EEPROM with Software Data Protection | Microchip 微芯科技 | ||
64K 8K x 8 Battery-Voltage CMOS E2PROM Description The AT28BV64 is a low-voltage, low-power Electrically Erasable and Programmable Read Only Memory specifically designed for battery powered applications. Its 64K of memory is organized 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device off | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage??Parallel EEPROM with Page Write and Software Data Protection Description The AT28BV64B is a high-performance electrically erasable programmable read only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件:367.88 Kbytes Page:17 Pages | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件:451.13 Kbytes Page:16 Pages | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
Hardware and Software Data Protection 文件:398.83 Kbytes Page:17 Pages | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
封裝/外殼:32-LCC(J 形引線) 包裝:管件 描述:IC EEPROM 64KBIT PARALLEL 32PLCC 集成電路(IC) 存儲(chǔ)器 | Microchip 微芯科技 | |||
封裝/外殼:32-LCC(J 形引線) 包裝:管件 描述:IC EEPROM 64KBIT PARALLEL 32PLCC 集成電路(IC) 存儲(chǔ)器 | Microchip 微芯科技 | |||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件:367.88 Kbytes Page:17 Pages | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件:451.13 Kbytes Page:16 Pages | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件:367.88 Kbytes Page:17 Pages | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件:367.88 Kbytes Page:17 Pages | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件:367.88 Kbytes Page:17 Pages | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件:367.88 Kbytes Page:17 Pages | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件:451.13 Kbytes Page:16 Pages | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件:367.88 Kbytes Page:17 Pages | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件:451.13 Kbytes Page:16 Pages | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 | |||
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 文件:367.88 Kbytes Page:17 Pages | AtmelAtmel Corporation 愛特梅爾愛特梅爾公司 |
AT28BV64B產(chǎn)品屬性
- 類型
描述
- 型號(hào)
AT28BV64B
- 制造商
ATMEL
- 制造商全稱
ATMEL Corporation
- 功能描述
64K(8K x 8) Battery-Voltage⑩ Parallel EEPROM with Page Write and Software Data Protection
IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
MICROCHIP(美國(guó)微芯) |
24+ |
TSOPI-28 |
6473 |
百分百原裝正品,可原型號(hào)開票 |
|||
ATMEL |
2016+ |
PLCC |
6000 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
|||
ATMEL/愛特梅爾 |
25+ |
TSOP28 |
65248 |
百分百原裝現(xiàn)貨 實(shí)單必成 |
|||
Microchip |
22+ |
32PLCC |
9000 |
原廠渠道,現(xiàn)貨配單 |
|||
AT |
23+ |
TSSOP |
9526 |
||||
Atmel |
23+ |
28-TSOP |
65600 |
||||
ATMEL |
24+ |
TSOP28 |
13500 |
免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系 |
|||
atmel |
23+ |
NA |
280 |
專做原裝正品,假一罰百! |
|||
ATMEL |
25+23+ |
TSSOP28 |
27635 |
絕對(duì)原裝正品全新進(jìn)口深圳現(xiàn)貨 |
|||
ATMEL |
22+ |
TSSOP28 |
8000 |
原裝正品支持實(shí)單 |
AT28BV64B芯片相關(guān)品牌
AT28BV64B規(guī)格書下載地址
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制造商: Microchip 產(chǎn)品種類: 電可擦除可編程只讀存儲(chǔ)器 安裝風(fēng)格: SMD/SMT 封裝 / 箱體: LCC-32 存儲(chǔ)容量: 256 kbit 組織: 32 k x 8 接口類型: Serial, 4-Wire, SDI, SPI 訪問時(shí)間: 150 ns 數(shù)據(jù)保留: 10 Year 電源電流—最大值: 50 mA 電源電壓-最小: 4.5 V 電源電壓-最大: 5.5 V 最小工作溫度
2019-11-29AT28C256-15LM/883
制造商: Microchip 產(chǎn)品種類: 電可擦除可編程只讀存儲(chǔ)器 發(fā)貨限制: Mouser 目前在您所在地區(qū)不銷售該產(chǎn)品。 RoHS: 詳細(xì)信息 安裝風(fēng)格: SMD/SMT 封裝 / 箱體: LCC-32 存儲(chǔ)容量: 256 kbit 組織: 32 k x 8 接口類型: Serial, 4-Wire, SDI, SPI 訪問時(shí)間: 150 ns 數(shù)據(jù)保留: 10 Year 電源電流—
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制造商: Microchip 產(chǎn)品種類: 電可擦除可編程只讀存儲(chǔ)器 發(fā)貨限制: Mouser 目前在您所在地區(qū)不銷售該產(chǎn)品。 RoHS: N 安裝風(fēng)格: Through Hole 封裝 / 箱體: Cerdip-32 存儲(chǔ)容量: 1 Mbit 組織: 128 k x 8 接口類型: Parallel 訪問時(shí)間: 120 ns 數(shù)據(jù)保留: 10 Year 最大時(shí)鐘頻率: 5 MHz 電源電流
2019-11-29
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