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型號(hào) | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
---|---|---|---|---|
APT6040 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV? N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 15.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC- | ISC 無(wú)錫固電 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 無(wú)錫固電 | |||
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS POWER MOS IV? N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS | ADPOW | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 18A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 無(wú)錫固電 | |||
POWER MOS V FREDFET POWER MOS V? FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. | ADPOW | |||
POWER MOS V FREDFET POWER MOS V? FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. | ADPOW | |||
POWER MOS V POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast | ADPOW | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D | ISC 無(wú)錫固電 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 16.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC | ISC 無(wú)錫固電 | |||
POWER MOS V FREDFET POWER MOS V? FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. | ADPOW | |||
POWER MOS V FREDFET POWER MOS V? FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. | ADPOW | |||
POWER MOS V POWER MOS V? Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout. ? Fast | ADPOW |
APT6040產(chǎn)品屬性
- 類型
描述
- 型號(hào)
APT6040
- 制造商
Microsemi Corporation
- 功能描述
POWER MOSFET TRANSISTOR
IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
APT |
24+ |
NA/ |
17068 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開票 |
|||
APT |
06+ |
TO-247 |
115 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
|||
APT |
25+ |
TO-247 |
82 |
原裝正品,歡迎來(lái)電咨詢! |
|||
APT |
23+ |
TO-3P |
3000 |
專做原裝正品,假一罰百! |
|||
APT |
21+ |
TO-247 |
115 |
原裝現(xiàn)貨假一賠十 |
|||
Microch |
20+ |
NA |
33560 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開原型號(hào)增稅票 |
|||
APT |
97 |
2 |
公司優(yōu)勢(shì)庫(kù)存 熱賣中!! |
||||
APT |
22+ |
TO-247 |
8000 |
原裝正品支持實(shí)單 |
|||
APT |
24+ |
8866 |
|||||
MICROCHIP/微芯 |
2406+ |
33000 |
誠(chéng)信經(jīng)營(yíng)!進(jìn)口原裝!量大價(jià)優(yōu)! |
APT6040規(guī)格書下載地址
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DdatasheetPDF頁(yè)碼索引
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