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型號 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
APT6030

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V? MOSFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout.

ADPOW

APT6030

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V? FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout.

ADPOW

APT6030

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT

晶科

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV? N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

ADPOW

N CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS TRANSISTORS

FEATURE N channel in a plastic TO-3PML package. Compliance to RoHS.

COMSET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

ISC

無錫固電

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V? FREDFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout.

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V? MOSFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout.

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V? MOSFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout.

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V? MOSFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout.

ADPOW

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=21A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.3Ω(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode p

ISC

無錫固電

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

POWER MOS V? MOSFET Power MOS V? is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V? also achieves faster switching speeds through optimized gate layout.

ADPOW

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件:142.99 Kbytes Page:4 Pages

ADPOW

isc N-Channel MOSFET Transistor

文件:420.35 Kbytes Page:2 Pages

ISC

無錫固電

POWER MOS V 600V 21A 0.300 Ohm

APT

晶科

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件:142.99 Kbytes Page:4 Pages

ADPOW

isc N-Channel MOSFET Transistor

文件:420.34 Kbytes Page:2 Pages

ISC

無錫固電

POWER MOS V 600V 21A 0.300 Ohm

APT

晶科

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

文件:142.99 Kbytes Page:4 Pages

ADPOW

PLUGS AND JACKS

[KEYSTONE]

etc2List of Unclassifed Manufacturers

etc未分類制造商etc2未分類制造商

Servo-assisted 2/2-way piston valve

The valve 6440 is a servo-assisted piston valve. The stopper and the core guide tube are welded together to increase pressure resistance and leak-tightness. The coils are moulded with highly chemically resistant epoxy. Sliding rings increase the service life for dry gases. Cartridge and flange

BURKERT

寶帝流體控制系統(tǒng)

Low Power Laser Mouse Bundles

Description The Agilent ADNB-6031 and ADNB-6032 low power laser mouse bundles are the world’s first laser-illuminated system enabled for cordless application. Powered by Agilent LaserStream technology, the mouse can operate on many surfaces that proved difficult for traditional LED-based optica

HP

安捷倫

Low Power Laser Mouse Sensor

文件:120.41 Kbytes Page:1 Pages

BOARDCOM

博通公司

Low Power Laser Mouse Sensor

文件:120.41 Kbytes Page:1 Pages

AVAGO

安華高

APT6030產(chǎn)品屬性

  • 類型

    描述

  • 型號

    APT6030

  • 制造商

    ADPOW

  • 制造商全稱

    Advanced Power Technology

  • 功能描述

    Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

更新時間:2025-9-13 20:00:00
IC供應商 芯片型號 品牌 批號 封裝 庫存 備注 價格
APT
24+
NA/
3260
原裝現(xiàn)貨,當天可交貨,原型號開票
APT
25+
TO247
7505
原裝正品,歡迎來電咨詢!
APT
23+
TO-3P
3000
專做原裝正品,假一罰百!
APT
2023+
TO247
8635
一級代理優(yōu)勢現(xiàn)貨,全新正品直營店
APT
22+
TO-247
8000
原裝正品支持實單
MICROCHIP(美國微芯)
24+
TO-247
7793
支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。
MICROCHIP/微芯
2406+
33000
誠信經(jīng)營!進口原裝!量大價優(yōu)!
24+
1100
APT
07+
TO-247
105
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
ADPOW
23+
原廠原包
19960
只做進口原裝 終端工廠免費送樣

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