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N-Channel Enhancement Mode MOSFET

Description The ACE11306A is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices ar

N-Channel Enhancement Mode MOSFET

Description The ACE11306A is the N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices ar

Fuse carriers, Domestic cartridge fuses

[carclo-optics] Avago 20 & 26.5mm Range Avago Aveon 20 & 26.5mmRange Avago Jade 20 & 26.5mmRange Avago Moonstone 20 & 26.5mmRange

PSG90809

Description RJ45 to RJ45 Category 6 patch cable with low profile strain reliefs.

KEYSTONE PTFE Insulated Terminals & Pins

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