国产精品久久久久无码av色戒,大帝av在线一区二区三区,国产肥熟女视频一区二区三区,大陆少妇xxxx做受,被黑人猛躁10次高潮视频

2SC4226晶體管資料

  • 2SC4226別名:2SC4226三極管、2SC4226晶體管、2SC4226晶體三極管

  • 2SC4226生產(chǎn)廠家:日本日電公司

  • 2SC4226制作材料:Si-NPN

  • 2SC4226性質(zhì):表面帖裝型 (SMD)_甚高頻 (VHF)_超高頻/特高頻

  • 2SC4226封裝形式:貼片封裝

  • 2SC4226極限工作電壓:12V

  • 2SC4226最大電流允許值:0.1A

  • 2SC4226最大工作頻率:4.5GHZ

  • 2SC4226引腳數(shù):3

  • 2SC4226最大耗散功率

  • 2SC4226放大倍數(shù)

  • 2SC4226圖片代號:H-15

  • 2SC4226vtest:12

  • 2SC4226htest:4500000000

  • 2SC4226atest:0.1

  • 2SC4226wtest:0

  • 2SC4226代換 2SC4226用什么型號代替:BFR106,2SC3775,

2SC4226價格

參考價格:¥0.3100

型號:2SC4226 品牌:RENESAS 備注:這里有2SC4226多少錢,2025年最近7天走勢,今日出價,今日競價,2SC4226批發(fā)/采購報價,2SC4226行情走勢銷售排行榜,2SC4226報價。
型號 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
2SC4226

HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied small mini mold package. FEATURES ? Low Noise NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7

NEC

瑞薩

2SC4226

NPN Silicon Epitaxial Transistor

Features ● Low noise and high gain. NF = 1.2 dB Typ. @VCE = 3V, IC = 7 mA, f = 1.0 GHz ● High gain. |S21e| 2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

KEXIN

科信電子

2SC4226

NPN Silicon Plastic Encapsulated Transistor

FEATURE ? The 2SC4226 is a Low supply voltage transistor designed for VHF, UHF low noise amplifier ? Suitable for a high density surface mount assembly since the transistor has been applied small mini mold package

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SC4226

NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold

NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold DESCRIPTION The NE85630 / 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has be

RENESAS

瑞薩

2SC4226

NPN Silicon Epitaxial Planar Transistor

FEATURES ● Low noise. ● High gain. ● Power dissipation.(PC=150mW) APPLICATIONS ● High frequency low noise amplifier.

BILIN

銀河微電

2SC4226

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

2SC4226

isc Silicon NPN Power Transistor

DESCRIPTION ? Low Collector Curren -IC= 0.1A ? Low Collector Power—Pc=0.1W With SOT-323 Package ? Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ? Designed for broadband low noise amplifier ; wideband low noise amplifie

ISC

無錫固電

2SC4226

Silicon Transistor

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

RENESAS

瑞薩

2SC4226

Silicon Transistor

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

RENESAS

瑞薩

2SC4226

NPN Silicon Epitaxial Planar Transistor

文件:258.519 Kbytes Page:3 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

2SC4226

2SC4226 is an ultra-high frequency low-noise transistor, using planar NPN silicon outside

文件:685.71 Kbytes Page:5 Pages

LEIDITECH

雷卯電子

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

NPN SILICON RF TRANSISTOR

NPN SILICON RF TRANSISTOR External bipolar process, with high power gain Low noise characteristics. The adoption of submit-niature SOT- 323 package, Especially suitable for high density surface patch installation, mainly for the VHF, UHF low noise amplifier. Feature High gain:︱S21e︱2 TYP. Va

SKTECHNOLGYSHIKE Electronics

時科廣東時科微實業(yè)有限公司

NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold

NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold DESCRIPTION The NE85630 / 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has be

RENESAS

瑞薩

NPN Silicon RF Transistor NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold

NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold DESCRIPTION The NE85630 / 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has be

RENESAS

瑞薩

NPN Silicon Epitaxial Planar Transistor

FEATURES Low noise. High gain. Power dissipation.(PC=150mW) APPLICATIONS High frequency low noise amplifier.

BILIN

銀河微電

NPN Silicon Epitaxial Planar Transistor

文件:258.519 Kbytes Page:3 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

NPN Silicon Epitaxial Planar Transistor

文件:258.62 Kbytes Page:3 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

封裝/外殼:SC-70,SOT-323 包裝:托盤 描述:RF TRANS NPN 12V 4.5GHZ SC70-3 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極(BJT)- 射頻

CEL

封裝/外殼:SC-70,SOT-323 包裝:托盤 描述:RF TRANS NPN 12V 4.5GHZ SOT323 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極(BJT)- 射頻

CEL

2SC4226產(chǎn)品屬性

  • 類型

    描述

  • 型號

    2SC4226

  • 制造商

    Panasonic Industrial Company

  • 功能描述

    TRANSISTOR

更新時間:2025-9-3 14:09:00
IC供應(yīng)商 芯片型號 品牌 批號 封裝 庫存 備注 價格
NEC
22+
SOT323
8000
原裝正品支持實單
RENESAS
23+
SOT-323
160000
R25全新RENESAS正品假一罰十
NEC
24+
SOT-323
96000
公司大量原裝現(xiàn)貨,歡迎來電
N/A
09+
SOT-23
100
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
NEC
21+
SOT-323
10052
原裝現(xiàn)貨假一賠十
CJ/長電
24+
SOT-323
50000
只做原裝,歡迎詢價,量大價優(yōu)
NEC
2023+
SOT-323
8800
正品渠道現(xiàn)貨 終端可提供BOM表配單。
Slkor/薩科微
24+
SOT-323
50000
Slkor/薩科微一級代理,價格優(yōu)勢
Bychip/百域芯
21+
SOT-323
330000
實單必成 質(zhì)強價優(yōu) 可開13點增值稅
NK/南科功率
9420
SOT-323
36520
國產(chǎn)南科平替供應(yīng)大量

2SC4226數(shù)據(jù)表相關(guān)新聞