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N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description ? N-channel enhancement mode field effect transistor, designed for high speed pulsed amplifier and driver applications, which is manufactored by the N-Channel DMOS process. Features ? High density cell design for low RDS(ON). ? Voltage controlled small signal switching. ? Rugged a

N-Channel Enhancement-Mode Vertical DMOS FETs

General Description The Supertex 2N7002 is an enhancement-mode (normally off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the h

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

FEATURES * 60 Volt VCEO

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

N-CHANNEL ENHANCEMENT-MODE MOSFET

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N7002 type is an N-Channel enhancement-mode MOSFET manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications.

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. Features ? Low On-Resistance ? Low Gate Threshold Voltage ? Low Input Capacitanc

N-Channel Enhancement Mode Field Effect Transistor

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Voltage - 60 Volts Drain Curreent - 115 mAmps FEATURES ● Low On-Resistance: RDS(ON) ● Low Gate Threshold Voltage ● Low Input Capacitance ● Fast Switching Speed ● Low Input/Output Leakage ● ESD Protected :1000V MECHANICAL DATA ● Case: SOT-23, Molded Plastic ● Case Material - UL Flammabili

N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

Voltage controlled small signal switch

MOSFET (N-Channel) FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

N-Channel Enhancement Mode Field Effect Transistor

Description These N-channel enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. They can be used

Plastic-Encapsulate Mosfets

N-Channel MOSFET FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.

MOSFET (N-Channel)

FEATURES ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features ? Low On-Resistance: RDS(ON) ? Low Gate Threshold Voltage ? Low Input Capacitance ? Fast Switching Speed ? Low Input/Output Leakage Mechanical Data ? Case: SOT-23, Molded Plastic ? Terminals: Solderable per MIL-STD-202, Method 208 ? Terminal Connections: See Diagram ? Marking: K

N-CHANNEL ENHANCEMENT-MODE MOSFETS

VOLTAGE 60Volts CURRENT 0.115 Ampers FEATURES SOT-23 Field Effect Transistors

Mosfet (N-Channel)

Features ◇ High density cell design for low RDS(ON) ◇ Voltage controlled small signal switch ◇ Rugged and reliable ◇ High saturation current capability

N-Channel Enhancement-Mode Vertical DMOS FET

General Description The Supertex 2N7002 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the hi

N-Channel Enhancement-Mode MOS Transistor

DESCRIPTION Calogic’s 2N7002 device type is a vertical DMOS FET transistor housed in a surface mount SOT-23 for micro-assembly applications. The device is an excellent choice for switching applications where breakdown (BV) and low on-resistance are important.

Advanced Small Signal MOSFET

BVDSS = 60 V RDS(on) = 5.0 ? ID = 200 mA FEATURES ● Lower RDS(on) ● Improved Inductive Ruggedness ● Fast Switching Times ● Lower Input Capacitance ● Extended Safe Operating Area ● Improved High Temperature Reliability

Small Signal MOSFET N-Channel

Features: *Low On-Resistance : 3 *Low Input Capacitance: 25PF *Low Out put Capacitance : 6PF *Low Threshole :1 .5V(TYE) *Fast Switching Speed : 7.5ns

N Channel Small Signal MOSFET

● DRIVES SWITCHS, RELAYS, SOLENOIDS, LAMPS, DISPLAYS, ETC. ● LOW OFFSET VOLTAGE ● LOW VOLTAGE OPERATION ● EASILY DRIVEN WITHOUT BUFFER

Logic N-Channel MOSFET

General Description This Power MOSFET is produced using planar DMOS technology. And this Power MOSFET is well suited for Battery switch, Load switch, Motor controller and other small signal switches. Features ■ RDS(on) (Max 7.5? )@VGS=10V RDS(on) (Max 7.5? )@VGS=4.5V ■ Gate Charge (Typical

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DESCRIPTION The UTC 2N7002 uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low RDS(ON). * Voltage Controlled Small Signa

N-channel 60V - 1.8ohm - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET

Description This Power MOSFET is the second generation of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

N-CHANNEL TRANSISTOR

Description The MTN7002N2 is a N-channel enhancement-mode MOS transistor. Drain-Sourse Voltage BVDSS 60 V Drain-Gate Voltage (RGS=1M:) BVDSS 60 V Gate-Source Voltage VGS +/-40 V Continuous Drain Current (Ta=25℃) ID 200 *1 mA Continuous Drain Current (Ta=100℃) ID 115 *1 mA Pulsed Drain Curre

SMD Signal DMOS Transistor (N-Channel)

Features ? Voltage Controlled Small Signal Switch ? High Density Cell Design for Low RDS(ON) ? Rugged and Reliable ? High Saturation Current Capablity ? RoHS Compliance

Small Signal MOSFET

Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23

TECHNICAL SPECIFICATIONS OF N-CHANNEL SMALL SIGNAL MOSFET

Description Designed for low voltage and low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

N-CHANNEL MOSFET

PRODUCT SUMMARY SOT-23 Plastic-Encapsulate Transistors FEATURES High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability

N-Channel MOSFET

Features ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability Drain-Source voltage VDS 60 V Drain Current ID 115 mA Power Dissipation PD 225 mW

NCE N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES ● VDS = 60V,ID = 0.115A RDS(ON)

FIELD EFFECT TRANSISTOR

INTERFACE AND SWITCHING APPLICATION. FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capablity.

N-channel vertical D-MOS transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS?technology. Product availability: 2N7002 in SOT23. Features TrenchMOS? technology Very fast switching Logic level compatible Subminiature surface mount package. Applic

N-Channel MOSFET

Features ? Halogen free available upon request by adding suffix -HF · ? Epoxy meets UL 94 V-0 flammability rating ? Moisture Sensitivity Level 1 ? Advanced Trench Process Technology ? High Input Impedance ? High Speed Switching ? CMOS Logic Compatible Input ? Marking : 7002/S72 · ·

Plastic-Encapsulated Transistors

FEATURES Power dissipation PD : 0.35W (Tamb=25℃) Drain current ID: 250mA Drain-Source voltage VDS: 60V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

Small Signal MOSFET Transistor

Small Signal MOSFET Transistor FEATURES ● High Density Cell Design For Low RDS(ON)。 ● Voltage Controlled Small Switch. ● Rugged and Reliable. ● High Saturation Current Capability. APPLICATIONS ● N-channel enhancement mode effect transistor. ● Switching application.

OptiMOS??Small-Signal-Transistor

OptiMOS Small-Signal-Transistor Features ? N-channel ? Enhancement mode ? Logic level ? Avalanche rated ? fast switching ? Pb-free lead-plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 340mA ● RDS(ON)( at VGS=10V)

SOT-23 Plastic-Encapsulate MOSFET

N -Channel MOSFET Features ● MOSFET (N-Channel) ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability Applications ● Load Switch for Portable Devices ● DC/DC Converter

N-Channel Enhancement Mode MOSFET

Feature ● 60V/0.5A, RDS(ON) = 7500mΩ(MAX) @VGS = 10V. Id = 0.5A RDS(ON) = 7500mΩ(MAX) @VGS = 4.5V. Id = 0.2A ● Super High dense cell design for extremely low RDS(ON) . ● Reliable and Rugged. ● SOT-23 for Surface Mount Package. Applications ● Power Management in Desktop C

N-Channel 60-V (D-S) MOSFET

FEATURES ● Low On-Resistance: 2.5 Ω ● Low Threshold: 2.1 V ● Low Input Capacitance: 22 pF ● Fast Switching Speed: 7 ns ● Low Input and Output Leakage BENEFITS ● Low Offset Voltage ● Low-Voltage Operation ● Easily Driven Without Buffer ● High-Speed Circuits ● Low Error Voltage APPLICATI

N-Channel Enhancement MOSFET

Features ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability

N-CHANNEL MOSFET in a SOT-23 Plastic Package

Descriptions N-CHANNEL MOSFET in a SOT-23 Plastic Package. Features Sensitive gate trigger current and Low Holding current.ESD protected diode. Applications Intended for use in general purpose switching and phase control applications.

N-Channel Enchanncement-Mode Mos Transistor

N-CHANNEL ENCHANNCEMENT-MODE MOS TRANSISTOR Description ???????SOT-23

Small Signal MOSFET Transistor

FEATURES ● High Density Cell Design For Low RDS(ON)。 ● Voltage Controlled Small Switch. ● Rugged and Reliable. ● High Saturation Current Capability. APPLICATIONS ● N-channel enhancement mode effect transistor. ● Switching application.

Small Signal MOSFET

Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 ? Pb?Free Package is Available. : Halogen Free ? AEC-Q101 Pass

MOSFET (N-Channel)

MOSFET (N-Channel) FEATURE ● High density cell design for low RDS(ON) ● Voltage controlled small signal switch ● Rugged and reliable ● High saturation current capability APPLICATION ● Load Switch for Portable Devices ● DC/DC Converter

SOT- 23 Plastic-Encapsulate MOSFETS

FEATURE * High density cell design for low RDS(ON) * Voltage controlled small signal switch * Rugged and reliable * High saturation current capability

N-Channel MOSFET

Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability

N-Channel Enhancement Mode Field Effect Transistor

General Description ● Trench Power MV MOSFET technology ● Voltage controlled small signal switch ● Low input Capacitance ● Fast Switching Speed ● Low Input / Output Leakage Applications ● Battery operated systems ● Solid-state relays ● Direct logic-level interface：TTL/CMOS

60 V, 300 mA N-channel Trench MOSFET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOSFET technology. 1.2 Features and benefits ? Suitable for logic level gate drive sources ? Very fast switching ? Surface-mounted package ? Trench MOSFET technology 1.3 Appl

N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.115A RDS(ON)

N-Channel Enhancement Mode Field Effect Transistor

Description These N?channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on?state resistance while providing rugged, reliable, and fast switching performance. These products

N-Channel Enhancement Mode Power MOSFET

General Features VDS = 60V,ID = 0.115A RDS(ON)

MOSFET

FEATURE High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability APPLICATION Load Switch for Portable Devices DC/DC Converter

N-Channel 60-V (D-S) MOSFET

? Low On-Resistance: 2.5 Ω ? Low Threshold: 2.1 V ? Low Input Capacitance: 22 pF ? Fast Switching Speed: 7 ns ? Low Input and Output Leakage

60V N-Channel Mosfet

Application ? Dict logi-fevl interface: TTLICMOS ? Drivers: relays, solenoids, lamps, hammers, display, memories, ransistors, tc. ? Battery operated systems ? Soicstate relays

N-Channel 60-V (D-S) MOSFET

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N-Channel 60-V (D-S) MOSFET

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