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2N6059晶體管資料

  • 2N6059別名:2N6059三極管、2N6059晶體管、2N6059晶體三極管

  • 2N6059生產(chǎn)廠家:美國(guó)摩托羅拉半導(dǎo)體公司_德國(guó)電子元件股份公司_美國(guó)

  • 2N6059制作材料:Si-N+Darl+Di

  • 2N6059性質(zhì):低頻或音頻放大 (LF)_開(kāi)關(guān)管 (S)_功率放大 (L

  • 2N6059封裝形式:直插封裝

  • 2N6059極限工作電壓:100V

  • 2N6059最大電流允許值:12A

  • 2N6059最大工作頻率:<1MHZ或未知

  • 2N6059引腳數(shù):2

  • 2N6059最大耗散功率:150W

  • 2N6059放大倍數(shù):β>750

  • 2N6059圖片代號(hào):E-44

  • 2N6059vtest:100

  • 2N6059htest:999900

  • 2N6059atest:12

  • 2N6059wtest:150

  • 2N6059代換 2N6059用什么型號(hào)代替:BDV65A,BDW83C,BDX65B,BDX67B,BDX87C,FH9D,MJ4035,TIP141,TIP642,2SC1830,2SD685,

2N6059價(jià)格

參考價(jià)格:¥17.1418

型號(hào):2N6059 品牌:MULTICOMP 備注:這里有2N6059多少錢,2025年最近7天走勢(shì),今日出價(jià),今日競(jìng)價(jià),2N6059批發(fā)/采購(gòu)報(bào)價(jià),2N6059行情走勢(shì)銷售排行榜,2N6059報(bào)價(jià)。
型號(hào) 功能描述 生產(chǎn)廠家 企業(yè) LOGO 操作
2N6059

NPN DARLINGTON POWER SILICON TRANSISTOR

NPN DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/502

Microsemi

美高森美

2N6059

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors . . . designed for general?purpose amplifier and low frequency switching applications. ? High DC Current Gain — hFE = 3500 (Typ) @ IC = 5.0 Adc ? Collector?Emitter Sustaining Voltage — @ 100 mA VCEO(sus) = 80 Vdc (Min) — 2N6058

ONSEMI

安森美半導(dǎo)體

2N6059

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS

boca

博卡

2N6059

SILICON DARLINGTON POWER TRANSISTORS

DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base process, designed for high gain amplifier and switching applications.

Central

2N6059

POWER TRANSISTORS(12A,150W)

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

MOSPEC

統(tǒng)懋

2N6059

POWER COMPLEMENTARY SILICON TRANSISTORS

POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types ar

COMSET

2N6059

isc Silicon NPN Darlingtion Power Transistor

DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gainhFE = 300 (Min) @ IC = 5A ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amp

ISC

無(wú)錫固電

2N6059

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High gain ·High current ·High dissipation ·Complement to type 2N5883/2N5884 APPLICATIONS ·They are intended for use in power linear and low frequency switching applications

JMNIC

錦美電子

2N6059

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

2N6059

DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

2N6059

NPN DARLINGTON TRANSISTOR

DARLINGTON 12 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60-100 VOLTS 150 WATTS ...designed lor general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Butt-in Base-Emitter Shunt Resistors. * High DC Current Gain -

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

2N6059

Silicon NPN Power Transistors

DESCRIPTION ·With TO-3 package ·High current ;high dissipation ·DARLINGTON ·Complement to type 2N5883;2N5884 APPLICATIONS ·They are intended for use in power linear and low frequency switching applications

SAVANTIC

2N6059

Power Transistors

Power Transistors

ETCList of Unclassifed Manufacturers

未分類制造商

2N6059

SILICON NPN POWER DARLINGTON TRANSISTOR

DESCRIPTION The 2N6059 is a silicon Epitaxial-Base NPN transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for use in power linear and low frequency switching applications. ■ STMicrolectronics PREFERRED SALESTYPE ■ HIGH GAIN ■ NPN DARL

STMICROELECTRONICS

意法半導(dǎo)體

2N6059

SILICON MULTI-EPITAXIAL NPN TRANSISTOR

? High Current Capability. ? Hermetic TO3 Metal package. ? Screening Options Available

TTELECTT Electronics.

TT電子公司梯梯電子集成制造服務(wù)(蘇州)有限公司

2N6059

封裝/外殼:TO-204AA,TO-3 包裝:剪切帶(CT)帶盒(TB) 描述:TRANS NPN DARL 100V 12A TO3 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè)

STMICROELECTRONICS

意法半導(dǎo)體

2N6059

包裝:散裝 描述:PNP POWER TRANSISTOR SILICON AMP 分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管(BJT)- 單個(gè)

Microchip

微芯科技

2N6059

Darlington NPN Silicon Power 80V 100V, 12A

Microchip

微芯科技

2N6059

Silicon NPN Power Transistors

文件:132.11 Kbytes Page:3 Pages

ISC

無(wú)錫固電

2N6059

SILICON MULTI-EPITAXIAL NPN TRANSISTOR

文件:185.99 Kbytes Page:3 Pages

SEME-LAB

Seme LAB

2N6059

SILICON NPN POWER DARLINGTON TRANSISTOR

文件:45.48 Kbytes Page:4 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2N6059

Silicon NPN Power Transistors

文件:115.28 Kbytes Page:3 Pages

SAVANTIC

2N6059

Bipolar NPN Device in a Hermetically sealed TO3

文件:16.32 Kbytes Page:1 Pages

SEME-LAB

Seme LAB

2N6059

POWER COMPLEMENTARY SILICON TRANSISTORS

文件:80.97 Kbytes Page:3 Pages

COMSET

2N6059

Darlington Complementary Silicon Power Transistors

文件:130.66 Kbytes Page:8 Pages

ONSEMI

安森美半導(dǎo)體

2N6059

Darlington Complementary Silicon Power Transistors

文件:149.78 Kbytes Page:7 Pages

ONSEMI

安森美半導(dǎo)體

SILICON NPN POWER DARLINGTON TRANSISTOR

文件:45.48 Kbytes Page:4 Pages

STMICROELECTRONICS

意法半導(dǎo)體

SILICON MULTI-EPITAXIAL NPN TRANSISTOR

文件:185.99 Kbytes Page:3 Pages

SEME-LAB

Seme LAB

2N6059產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    2N6059

  • 功能描述

    達(dá)林頓晶體管 NPN Darlington LTB 9-2009

  • RoHS

  • 制造商

    Texas Instruments

  • 配置

    Octal

  • 晶體管極性

    NPN 集電極—發(fā)射極最大電壓

  • VCEO

    50 V 發(fā)射極 - 基極電壓

  • VEBO

    集電極—基極電壓

  • 最大直流電集電極電流

    0.5 A

  • 最大工作溫度

    + 150 C

  • 安裝風(fēng)格

    SMD/SMT

  • 封裝/箱體

    SOIC-18

  • 封裝

    Reel

更新時(shí)間:2025-9-14 17:06:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
MOTOROLA/摩托羅拉
19+
MODULE
1290
主打模塊,大量現(xiàn)貨供應(yīng)商QQ2355605126
2015+
3000
公司現(xiàn)貨庫(kù)存
MOTOROLA/摩托羅拉
2023+
MODULE
147
主打螺絲模塊系列
2015+
3000
公司現(xiàn)貨庫(kù)存
24+
TO-3
10000
全新
MOT
20+
TO-3
38900
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票
Central
2000
TO-3
20
原裝現(xiàn)貨海量庫(kù)存歡迎咨詢
STM
24+
N/A
4326
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫(kù)存!
STM
25+
TO-3
75
百分百原裝正品 真實(shí)公司現(xiàn)貨庫(kù)存 本公司只做原裝 可
MOTOROLA
專業(yè)鐵帽
TO-3
1500
原裝鐵帽專營(yíng),代理渠道量大可訂貨

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