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27C512A

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512 Kbit 64Kb x8 UV EPROM and OTP EPROM

SUMMARY DESCRIPTION The M27C512 is a 512 Kbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for applications where fast turn-around and pattern experi mentation are important requirements and is organized as 65536 by 8 bits. F

STMICROELECTRONICS

意法半導(dǎo)體

512K (64K x 8) UV EPROM and OTP EPROM

DESCRIPTION The M27C512 is a high speed 524,288 bit UV erasable and electrically programmable EPROM ideally suited for applications where fast turnaround and pattern experimentation are important requirements. Its is organized as 65,536 by 8 bits. The Window Ceramic Frit-Seal Dual-in-Line pa

SYC

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

512K (64K x 8) CMOS EPROM

Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T

Microchip

微芯科技

27C512A產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    27C512A

  • 制造商

    MICROCHIP

  • 制造商全稱

    Microchip Technology

  • 功能描述

    512K(64K x 8) CMOS EPROM

更新時(shí)間:2025-8-29 23:01:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫存 備注 價(jià)格
MROCHIP/微芯
24+
NA/
18000
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票
MICROCHIP
9437+
DIP
15
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
MIT
24+/25+
12
原裝正品現(xiàn)貨庫存價(jià)優(yōu)
MICROCHIP/微芯
23+
LCC-32
5000
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道??商峁┐罅繋齑?詳
MICROCHIP
21+
DIP
15
原裝現(xiàn)貨假一賠十
22+
5000
MICROCHIP
2511
DIP
5904
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價(jià)
MICROCHIP
23+
DIP
15
正規(guī)渠道,只有原裝!
National
25+
25000
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票!
MICROCHIP
24+
DIP28
4231
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存!

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