位置:首頁 > IC中文資料第6390頁 > 27C512A
型號(hào) | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
---|---|---|---|---|
27C512A | 512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | ||
512 Kbit 64Kb x8 UV EPROM and OTP EPROM SUMMARY DESCRIPTION The M27C512 is a 512 Kbit EPROM offered in the two ranges UV (ultra violet erase) and OTP (one time programmable). It is ideally suited for applications where fast turn-around and pattern experi mentation are important requirements and is organized as 65536 by 8 bits. F | STMICROELECTRONICS 意法半導(dǎo)體 | |||
512K (64K x 8) UV EPROM and OTP EPROM DESCRIPTION The M27C512 is a high speed 524,288 bit UV erasable and electrically programmable EPROM ideally suited for applications where fast turnaround and pattern experimentation are important requirements. Its is organized as 65,536 by 8 bits. The Window Ceramic Frit-Seal Dual-in-Line pa | SYC | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 | |||
512K (64K x 8) CMOS EPROM Obsolete Device : 27C512A is a CMOS 512K bit electrically Programmable Read Only Memory (EPROM). The device is organized into 64K words by 8 bits (64K bytes). Accessing individual bytes from an address transition or from power-up (chip enable pin going low) is accomplished in less than 90 ns. T | Microchip 微芯科技 |
27C512A產(chǎn)品屬性
- 類型
描述
- 型號(hào)
27C512A
- 制造商
MICROCHIP
- 制造商全稱
Microchip Technology
- 功能描述
512K(64K x 8) CMOS EPROM
IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
MROCHIP/微芯 |
24+ |
NA/ |
18000 |
優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票 |
|||
MICROCHIP |
9437+ |
DIP |
15 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
|||
MIT |
24+/25+ |
12 |
原裝正品現(xiàn)貨庫存價(jià)優(yōu) |
||||
MICROCHIP/微芯 |
23+ |
LCC-32 |
5000 |
原廠授權(quán)代理,海外優(yōu)勢(shì)訂貨渠道??商峁┐罅繋齑?詳 |
|||
MICROCHIP |
21+ |
DIP |
15 |
原裝現(xiàn)貨假一賠十 |
|||
22+ |
5000 |
||||||
MICROCHIP |
2511 |
DIP |
5904 |
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價(jià) |
|||
MICROCHIP |
23+ |
DIP |
15 |
正規(guī)渠道,只有原裝! |
|||
National |
25+ |
25000 |
原廠原包 深圳現(xiàn)貨 主打品牌 假一賠百 可開票! |
||||
MICROCHIP |
24+ |
DIP28 |
4231 |
公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢(shì)庫存! |
27C512A芯片相關(guān)品牌
27C512A規(guī)格書下載地址
27C512A參數(shù)引腳圖相關(guān)
- 4921
- 4899
- 485接口
- 47471
- 4735
- 47301
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽車
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2n3904
- 27E122
- 27E1082
- 27E1081
- 27E1080
- 27E1079
- 27DW-9W
- 27DW-6W
- 27DW-3W
- 27DW_18
- 27DS-BR
- 27D-6W
- 27D-3W
- 27D_17
- 27CP-BR
- 27C801
- 27C800
- 27C64A
- 27C64
- 27C513
- 27C512T
- 27C512A12IL
- 27C512A-12I/SO
- 27C512A-12I/P
- 27C512A-12I/L
- 27C512A-12I/K
- 27C512A-12I/J
- 27C512A12FA
- 27C512A-12EVS
- 27C512A-12/P
- 27C512A-12/K
- 27C512A-12/J
- 27C512A-10VS
- 27C512A-10TS
- 27C512A-10SO
- 27C512A10SO
- 27C512A-10P
- 27C512A10P
- 27C512A-10L
- 27C512A10L
- 27C512A-10IVS
- 27C512-90E/P
- 27C512-90E/L
- 27C512-90E/K
- 27C512-90E/J
- 27C512-90/TS
- 27C512-90/SO
- 27C512-90/P
- 27C512-90/L
- 27C512-90/K
- 27C512-90/J
- 27C512-90
- 27C512-75DC
- 27C512-70WMB
- 27C512-70DM/B
- 27C512-70
- 27C512-55DM/B
- 27C512-55DI
- 27C512-55
- 27C512-45
- 27C51225JL
- 27C512
- 27C4100
- 27C4096
- 27C4001
- 27C256T
- 27C256R
- 27C256N
- 27C256D
- 27C256A
- 27C256
- 27C215
- 27C210
- 27C2048
- 27C2001
- 27C160
- 27C16
- 27C128
- 27C1100
- 27C1028
- 27C1024
27C512A數(shù)據(jù)表相關(guān)新聞
28.901.U166.10
LED照明安裝配件 Fixing element Push to fix
2023-12-29282080-1
進(jìn)口代理
2022-11-2627110B103JO0高壓傳輸云母電容器
云母電容器采用堅(jiān)固的固態(tài)鑄造封裝,可提供高抗沖擊和振動(dòng)能力
2022-10-18282080-1新到貨原廠渠道,現(xiàn)貨配單!
15-29-1027 34566-0803 5749070-9 6-102618-5 171814-0003 5788643-1 15-31-1021 368502-1 1469001-1 STO-2.5T-250N 19435-1014 90142-0006 34797-0202 3900-0281 5747194-3 1355348-1 B6B-PH-SM4-TB(LF)(SN) 5794172-3 1-1355133-2 15-91-0060 6-103897-2 XHP-9 534267-1 35
2022-8-1227C040Q100,27C128JL,27C256-15CHA,27C512-15A,030N03LS,030N03MS,080N03LS,080N03MS,1008LS-103XJLC,1009S12WFR,100UF6.3V6.3X5.3,100113DC,10MQ040NPBF,11596-21
27C040Q100,27C128JL,27C256-15CHA,27C512-15A,030N03LS,030N03MS,080N03LS,080N03MS,1008LS-103XJLC,1009S12WFR,100UF 6.3V 6.3X5.3,100113DC,10MQ040NPBF,11596-21
2020-1-227C256B原裝正品價(jià)格優(yōu)勢(shì)
我們竭誠為您服務(wù) 0755-82340907 13342971909 吳小姐
2019-3-1
DdatasheetPDF頁碼索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104