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1N65價(jià)格
參考價(jià)格:¥66.1730
型號(hào):1N6536 品牌:Microsemi Commercial Com 備注:這里有1N65多少錢,2025年最近7天走勢(shì),今日出價(jià),今日競(jìng)價(jià),1N65批發(fā)/采購(gòu)報(bào)價(jià),1N65行情走勢(shì)銷售排行榜,1N65報(bào)價(jià)。型號(hào) | 功能描述 | 生產(chǎn)廠家&企業(yè) | LOGO | 操作 |
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1N65 | GOLD BONDED DIODES [VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time | ETCList of Unclassifed Manufacturers 未分類制造商 | ||
1N65 | 1.2A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po | UTC 友順 | ||
1N65 | N-CHANNEL MOSFET DESCRIPTION 1N60 1N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power su | ZSELEC 淄博圣諾電子 | ||
1N65 | Drain Current ID= 1.2A@ TC=25C ·FEATURES ? Drain Current ID= 1.2A@ TC=25℃ ? Drain Source Voltage- : VDSS= 650V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 12.5Ω (Max) ? Fast Switching ·APPLICATIONS ? Switching power supplies,converters,AC and DC motor controls | ISC 無(wú)錫固電 | ||
1N65 | 650V N-Channel Power MOSFET Features RDS(ON) | SY 順燁電子 | ||
1N65 | N-CHANNEL POWER MOSFET 文件:717.14 Kbytes Page:9 Pages | UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司 | ||
GENERAL PURPOSE SILICON DIODES GENERAL PURPOSE SILICON DIODES This device is a Silicon Double Plug Diode for general purpose use in computer, industrial and military applications. | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | |||
MONOLITHIC AIR ISOLATED DIODE ARRAY DESCRIPTION These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the positive side o | Microsemi 美高森美 | |||
MONOLITHIC AIR ISOLATED DIODE ARRAY DESCRIPTION These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to ground (see figure | Microsemi 美高森美 | |||
MONOLITHIC AIR ISOLATED DIODE ARRAY DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the positive side of the po | Microsemi 美高森美 | |||
DIODE ARRAY PRODUCT SPECIFICATION DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the positive side of the po | Microsemi 美高森美 | |||
ISOLATED DIODE ARRAY Features: ? Protects up to 8 I/O Ports ? Isolated diodes eliminate crosstalk ? High Density Packaging ? High Breakdown Voltage; High Speed Switching ( | SENSITRON | |||
DIODE ARRAY CIRCUITS DESCRIPTION The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. Each array configuration consists of either common anode diodes, common cathode diodes, or a combination of common anode and common cathode diodes. Individual diodes within | Microsemi 美高森美 | |||
MONOLITHIC AIR ISOLATED DIODE ARRAY DESCRIPTION The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. Each array configuration consists of either common anode diodes, common cathode diodes, or a combination of common anode and common cathode diodes. Individual diodes within | Microsemi 美高森美 | |||
DIODE ARRAY CIRCUITS DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has 8 straight through diodes. FEATURES ? 75V minimum breakdown voltage | Microsemi 美高森美 | |||
MONOLITHIC AIR ISOLATED DIODE ARRAY DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN ceramic flat pack for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them either to the positive side of | Microsemi 美高森美 | |||
MONOLITHIC AIR ISOLATED DIODE ARRAY DESCRIPTION These lowcapacitance diode arrays are multiple, discrete, isolatedjunctions fabricated by a planar process and mounted in a 14-PINceramic DIP packagefor useas steering diodes protecting up to seven I/O ports from ESD, EFT,or surge by directing them either to the positive sideof the | Microsemi 美高森美 | |||
DIODE ARRAY CIRCUITS DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has 8 straight through diodes. FEATURES ? 75V minimum breakdown voltage | Microsemi 美高森美 | |||
70NS RECOVERY, AXIAL LEADED, HERMETIC HIGH VOLTAGE RECTIFIERS 70ns Recovery ? Axial Leaded ? Hermetic | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | |||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 175°C maximum operat | SSDI | |||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17 | SSDI | |||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17 | SSDI | |||
SURFACE MOUNT RECTIFIERS 70NS RECOVERY, HERMETIC, JANTX, JANTXV 70ns Recovery Hermetic JANTX JANTXV | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | |||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 175°C maximum operat | SSDI | |||
0.5A-2.0A RECTIFIERS 2,000V - 10,000V working reverse voltage 70 ns Recovery Time Operating Temperature = -65 to +175°C Storage Temperature = -65 to +200°C | DIGITRON | |||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17 | SSDI | |||
Axial Leaded Rectifiers Axial Leaded Rectifiers | AMMSEMI | |||
2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time [VOLTAGE MULTIPLIERS INC.] 2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED MIL-PRF-19500/575 | ETCList of Unclassifed Manufacturers 未分類制造商 | |||
2,000 V - 5,000 V Rectifiers [VOLTAGE MULTIPLIERS INC.] 2,000 V - 5,000 V Rectifiers 2.0 A - 5.0 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED | ETCList of Unclassifed Manufacturers 未分類制造商 | |||
Spice Model High Voltage Diodes - Axial Lead 0.5A - 2.0A ? 70ns ? Hermetic ? JANTX ? JANTXV | VMI | |||
70NS RECOVERY, AXIAL LEADED, HERMETIC HIGH VOLTAGE RECTIFIERS 70ns Recovery ? Axial Leaded ? Hermetic | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | |||
High Voltage Rectifiers - Formed Lead High Voltage Rectifiers - Formed Lead ??????? 0.8A - 3.5A ? 30ns - 70ns ? Hermetic | VMI | |||
2,000 V - 5,000 V Rectifiers High Voltage Rectifiers - Formed Lead 0.8A - 3.5A? 30ns - 70ns ? Hermetic | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | |||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17 | SSDI | |||
SURFACE MOUNT RECTIFIERS 70NS RECOVERY, HERMETIC, JANTX, JANTXV 70ns Recovery Hermetic JANTX JANTXV | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | |||
2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time 2,000 V - 5,000 V Rectifiers 2.0 A - 5.0 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED | VMI | |||
2,000 V - 5,000 V Rectifiers [VOLTAGE MULTIPLIERS INC.] 2,000 V - 5,000 V Rectifiers 2.0 A - 5.0 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED | ETCList of Unclassifed Manufacturers 未分類制造商 | |||
HIGH VOLTAGE DIODES - SURFACE MOUNT HIGH VOLTAGE DIODES - SURFACE MOUNT | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | |||
70NS RECOVERY, AXIAL LEADED, HERMETIC HIGH VOLTAGE RECTIFIERS 70ns Recovery ? Axial Leaded ? Hermetic | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | |||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17 | SSDI | |||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 175°C maximum operat | SSDI | |||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17 | SSDI | |||
SURFACE MOUNT RECTIFIERS 70NS RECOVERY, HERMETIC, JANTX, JANTXV 70ns Recovery Hermetic JANTX JANTXV | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | |||
70NS RECOVERY, AXIAL LEADED, HERMETIC HIGH VOLTAGE RECTIFIERS 70ns Recovery ? Axial Leaded ? Hermetic | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | |||
2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time [VOLTAGE MULTIPLIERS INC.] 2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED MIL-PRF-19500/575 | ETCList of Unclassifed Manufacturers 未分類制造商 | |||
Spice Model High Voltage Diodes - Axial Lead 0.5A - 2.0A ? 70ns ? Hermetic ? JANTX ? JANTXV | VMI | |||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 175°C maximum operat | SSDI | |||
Axial Leaded Rectifiers Axial Leaded Rectifiers | AMMSEMI | |||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17 | SSDI | |||
0.5A-2.0A RECTIFIERS 2,000V - 10,000V working reverse voltage 70 ns Recovery Time Operating Temperature = -65 to +175°C Storage Temperature = -65 to +200°C | DIGITRON | |||
2,000 V - 5,000 V Rectifiers High Voltage Rectifiers - Formed Lead 0.8A - 3.5A? 30ns - 70ns ? Hermetic | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | |||
High Voltage Rectifiers - Formed Lead High Voltage Rectifiers - Formed Lead ??????? 0.8A - 3.5A ? 30ns - 70ns ? Hermetic | VMI | |||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17 | SSDI | |||
2,000 V - 5,000 V Rectifiers [VOLTAGE MULTIPLIERS INC.] 2,000 V - 5,000 V Rectifiers 2.0 A - 5.0 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED | ETCList of Unclassifed Manufacturers 未分類制造商 | |||
SURFACE MOUNT RECTIFIERS 70NS RECOVERY, HERMETIC, JANTX, JANTXV 70ns Recovery Hermetic JANTX JANTXV | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | |||
HIGH VOLTAGE DIODES - SURFACE MOUNT HIGH VOLTAGE DIODES - SURFACE MOUNT | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | |||
70NS RECOVERY, AXIAL LEADED, HERMETIC HIGH VOLTAGE RECTIFIERS 70ns Recovery ? Axial Leaded ? Hermetic | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | |||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17 | SSDI | |||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 175°C maximum operat | SSDI | |||
ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17 | SSDI |
1N65產(chǎn)品屬性
- 類型
描述
- 型號(hào)
1N65
- 制造商
UTC-IC
- 制造商全稱
UTC-IC
- 功能描述
1.2A, 650V N-CHANNEL POWER MOSFET
IC供應(yīng)商 | 芯片型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
VMI |
24+ |
NA/ |
6206 |
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
國(guó)產(chǎn) |
|||
UMW(廣東友臺(tái)半導(dǎo)體) |
24+ |
TO-252 |
5000 |
誠(chéng)信服務(wù),絕對(duì)原裝原盤。 |
|||
UTC |
2450+ |
SOT-223 |
18500 |
只做原廠原裝正品終端客戶免費(fèi)申請(qǐng)樣品 |
|||
MSC |
QQ咨詢 |
CDIP |
104 |
全新原裝 研究所指定供貨商 |
|||
UMW 友臺(tái) |
23+ |
TO-252 |
22500 |
原裝正品,實(shí)單請(qǐng)聯(lián)系 |
|||
UMW/廣東友臺(tái)半導(dǎo)體 |
25+ |
SOT-223-4 |
32360 |
UMW/廣東友臺(tái)半導(dǎo)體全新特價(jià)1N65G即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨 |
|||
VMI |
25+ |
18000 |
一級(jí)代理保證進(jìn)口原裝正品假一罰十價(jià)格合理 |
||||
VOLTAGE MULTIPLIERS |
23+ |
SMD |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
|||
VMI |
23+ |
NA |
114 |
專做原裝正品,假一罰百! |
1N65芯片相關(guān)品牌
1N65規(guī)格書下載地址
1N65參數(shù)引腳圖相關(guān)
- 4591
- 4536
- 4313
- 4069
- 4066
- 3q1
- 3g汽車
- 3579
- 35001
- 3477
- 31337
- 303c
- 2sc4226
- 2n3904
- 256p
- 2531
- 240m
- 2222a
- 20kv
- 20700
- 1N710
- 1N709
- 1N704
- 1N695A
- 1N6643US
- 1N6642US
- 1N6642UJANTX
- 1N6642U
- 1N6638US
- 1N6637
- 1N6628US
- 1N6628
- 1N6627US
- 1N6627
- 1N6625E3
- 1N6622US
- 1N6622
- 1N6621US
- 1N659
- 1N6536
- 1N6517U
- 1N6517
- 1N6516U
- 1N6516
- 1N6515U
- 1N6515
- 1N6514U
- 1N6514
- 1N6513U
- 1N6513
- 1N6512U
- 1N6512
- 1N6511
- 1N6510
- 1N6509
- 1N6508
- 1N6507
- 1N6506
- 1N6505
- 1N65_15
- 1N6492
- 1N649-1
- 1N6491
- 1N6490US
- 1N6490
- 1N649
- 1N6489
- 1N6488
- 1N6487
- 1N6486
- 1N6485US
- 1N6485
- 1N6484HE3/96
- 1N6484-E3/97
- 1N6484-E3/96
- 1N6484
- 1N6483-E3/96
- 1N6483
- 1N6482-E3/96
- 1N6482
- 1N6481-E3/96
- 1N648-1
- 1N6481
- 1N6480-E3/96
- 1N6480
- 1N648
- 1N647UR-1
- 1N6479HE3/96
- 1N6479-E3/96
- 1N6479
- 1N6478-E3/96
- 1N6478-E3/76
- 1N6478
- 1N6476
- 1N647-1
1N65數(shù)據(jù)表相關(guān)新聞
1N60G-SOT223R-B-TG_UTC代理商
1N60G-SOT223R-B-TG_UTC代理商
2023-3-71N6525 全套的高壓二極管
全新原裝進(jìn)口,質(zhì)量保證,宇集芯一對(duì)一服務(wù)您放心的品質(zhì),急速發(fā)貨,VMI提供世界上最全套的高壓二極管。軸向引線和SMD二極管的范圍從2kV到20kV。所有的晶圓都是在我們的設(shè)備中摻雜、擴(kuò)散和金屬化的。我們提供廣泛的測(cè)試,以確保我們的客戶收到最/高質(zhì)量的二極管。
2021-5-181N6513 全套表面貼裝二極管
全新原裝進(jìn)口,質(zhì)量保證,宇集芯您放心的品質(zhì),VMI提供世界上最全套的高壓二極管。軸向引線和SMD二極管的范圍從2kV到20kV。所有的晶圓都是在我們的設(shè)備中摻雜、擴(kuò)散和金屬化的。我們提供廣泛的測(cè)試,以確保我們的客戶收到最/高質(zhì)量的二極管。
2021-5-141N6529 全套中高壓二極管
全新原裝進(jìn)口,質(zhì)量保證,宇集芯您放心的品質(zhì),VMI提供世界上最全套的高壓二極管。軸向引線和SMD二極管的范圍從2kV到20kV。所有的晶圓都是在我們的設(shè)備中摻雜、擴(kuò)散和金屬化的。我們提供廣泛的測(cè)試,以確保我們的客戶收到最/高質(zhì)量的二極管。
2021-5-131N6117代理渠道 ,進(jìn)口原裝
1N6117 代理渠道 ,進(jìn)口原裝
2020-10-191N5924BRLG,1N5927BG,1N6295AG,1N6296A,1N6297A,1N6298ARL4
1N5924BRLG,1N5927BG,1N6295AG,1N6296A,1N6297A,1N6298ARL4
2020-3-10
DdatasheetPDF頁(yè)碼索引
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