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1N65價(jià)格

參考價(jià)格:¥66.1730

型號(hào):1N6536 品牌:Microsemi Commercial Com 備注:這里有1N65多少錢,2025年最近7天走勢(shì),今日出價(jià),今日競(jìng)價(jià),1N65批發(fā)/采購(gòu)報(bào)價(jià),1N65行情走勢(shì)銷售排行榜,1N65報(bào)價(jià)。
型號(hào) 功能描述 生產(chǎn)廠家&企業(yè) LOGO 操作
1N65

GOLD BONDED DIODES

[VMI] 200 V - 1,000 V Single Phase Bridge 22.0 A - 25.0 A Forward Current 70 ns - 3000 ns Recovery Time

ETCList of Unclassifed Manufacturers

未分類制造商

1N65

1.2A, 650V N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 1N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in the high speed switching applications of po

UTC

友順

1N65

N-CHANNEL MOSFET

DESCRIPTION 1N60 1N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power su

ZSELEC

淄博圣諾電子

1N65

Drain Current ID= 1.2A@ TC=25C

·FEATURES ? Drain Current ID= 1.2A@ TC=25℃ ? Drain Source Voltage- : VDSS= 650V(Min) ? Static Drain-Source On-Resistance : RDS(on) = 12.5Ω (Max) ? Fast Switching ·APPLICATIONS ? Switching power supplies,converters,AC and DC motor controls

ISC

無(wú)錫固電

1N65

650V N-Channel Power MOSFET

Features RDS(ON)

SY

順燁電子

1N65

N-CHANNEL POWER MOSFET

文件:717.14 Kbytes Page:9 Pages

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

GENERAL PURPOSE SILICON DIODES

GENERAL PURPOSE SILICON DIODES This device is a Silicon Double Plug Diode for general purpose use in computer, industrial and military applications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

MONOLITHIC AIR ISOLATED DIODE ARRAY

DESCRIPTION These low capacitance diode arrays with common cathode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the positive side o

Microsemi

美高森美

MONOLITHIC AIR ISOLATED DIODE ARRAY

DESCRIPTION These low capacitance diode arrays with common anode are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 10-PIN package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to ground (see figure

Microsemi

美高森美

MONOLITHIC AIR ISOLATED DIODE ARRAY

DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the positive side of the po

Microsemi

美高森美

DIODE ARRAY PRODUCT SPECIFICATION

DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 14-PIN ceramic DIP package for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them to the positive side of the po

Microsemi

美高森美

ISOLATED DIODE ARRAY

Features: ? Protects up to 8 I/O Ports ? Isolated diodes eliminate crosstalk ? High Density Packaging ? High Breakdown Voltage; High Speed Switching (

SENSITRON

DIODE ARRAY CIRCUITS

DESCRIPTION The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. Each array configuration consists of either common anode diodes, common cathode diodes, or a combination of common anode and common cathode diodes. Individual diodes within

Microsemi

美高森美

MONOLITHIC AIR ISOLATED DIODE ARRAY

DESCRIPTION The Linfinity series of diode arrays feature high breakdown, high speed diodes in a variety of configurations. Each array configuration consists of either common anode diodes, common cathode diodes, or a combination of common anode and common cathode diodes. Individual diodes within

Microsemi

美高森美

DIODE ARRAY CIRCUITS

DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has 8 straight through diodes. FEATURES ? 75V minimum breakdown voltage

Microsemi

美高森美

MONOLITHIC AIR ISOLATED DIODE ARRAY

DESCRIPTION These low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and mounted in a 16-PIN ceramic flat pack for use as steering diodes protecting up to eight I/O ports from ESD, EFT, or surge by directing them either to the positive side of

Microsemi

美高森美

MONOLITHIC AIR ISOLATED DIODE ARRAY

DESCRIPTION These lowcapacitance diode arrays are multiple, discrete, isolatedjunctions fabricated by a planar process and mounted in a 14-PINceramic DIP packagefor useas steering diodes protecting up to seven I/O ports from ESD, EFT,or surge by directing them either to the positive sideof the

Microsemi

美高森美

DIODE ARRAY CIRCUITS

DESCRIPTION The SG6100/SG6511 and SG6101/SG6510 diode arrays are monolithic, high breakdown, fast switching speed diode arrays. The SG6100/SG6511 is configured with 7 straight through diodes, while the SG6101/SG6510 has 8 straight through diodes. FEATURES ? 75V minimum breakdown voltage

Microsemi

美高森美

70NS RECOVERY, AXIAL LEADED, HERMETIC

HIGH VOLTAGE RECTIFIERS 70ns Recovery ? Axial Leaded ? Hermetic

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER

FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 175°C maximum operat

SSDI

ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER

FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17

SSDI

ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER

FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17

SSDI

SURFACE MOUNT RECTIFIERS 70NS RECOVERY, HERMETIC, JANTX, JANTXV

70ns Recovery Hermetic JANTX JANTXV

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER

FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 175°C maximum operat

SSDI

0.5A-2.0A RECTIFIERS

2,000V - 10,000V working reverse voltage 70 ns Recovery Time Operating Temperature = -65 to +175°C Storage Temperature = -65 to +200°C

DIGITRON

ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER

FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17

SSDI

Axial Leaded Rectifiers

Axial Leaded Rectifiers

AMMSEMI

2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time

[VOLTAGE MULTIPLIERS INC.] 2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED MIL-PRF-19500/575

ETCList of Unclassifed Manufacturers

未分類制造商

2,000 V - 5,000 V Rectifiers

[VOLTAGE MULTIPLIERS INC.] 2,000 V - 5,000 V Rectifiers 2.0 A - 5.0 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED

ETCList of Unclassifed Manufacturers

未分類制造商

Spice Model

High Voltage Diodes - Axial Lead 0.5A - 2.0A ? 70ns ? Hermetic ? JANTX ? JANTXV

VMI

70NS RECOVERY, AXIAL LEADED, HERMETIC

HIGH VOLTAGE RECTIFIERS 70ns Recovery ? Axial Leaded ? Hermetic

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

High Voltage Rectifiers - Formed Lead

High Voltage Rectifiers - Formed Lead ??????? 0.8A - 3.5A ? 30ns - 70ns ? Hermetic

VMI

2,000 V - 5,000 V Rectifiers

High Voltage Rectifiers - Formed Lead 0.8A - 3.5A? 30ns - 70ns ? Hermetic

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER

FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17

SSDI

SURFACE MOUNT RECTIFIERS 70NS RECOVERY, HERMETIC, JANTX, JANTXV

70ns Recovery Hermetic JANTX JANTXV

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2,000 V - 5,000 V Rectifiers 0.5 A - 1.5 A Forward Current 30 ns - 50 ns Recovery Time

2,000 V - 5,000 V Rectifiers 2.0 A - 5.0 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED

VMI

2,000 V - 5,000 V Rectifiers

[VOLTAGE MULTIPLIERS INC.] 2,000 V - 5,000 V Rectifiers 2.0 A - 5.0 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED

ETCList of Unclassifed Manufacturers

未分類制造商

HIGH VOLTAGE DIODES - SURFACE MOUNT

HIGH VOLTAGE DIODES - SURFACE MOUNT

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

70NS RECOVERY, AXIAL LEADED, HERMETIC

HIGH VOLTAGE RECTIFIERS 70ns Recovery ? Axial Leaded ? Hermetic

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER

FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17

SSDI

ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER

FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 175°C maximum operat

SSDI

ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER

FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17

SSDI

SURFACE MOUNT RECTIFIERS 70NS RECOVERY, HERMETIC, JANTX, JANTXV

70ns Recovery Hermetic JANTX JANTXV

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

70NS RECOVERY, AXIAL LEADED, HERMETIC

HIGH VOLTAGE RECTIFIERS 70ns Recovery ? Axial Leaded ? Hermetic

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time

[VOLTAGE MULTIPLIERS INC.] 2,000 V - 10,000 V Rectifiers 0.5 A - 2.0 A Forward Current 70 ns Recovery Time AXIAL LEADED HERMETICALLY SEALED MIL-PRF-19500/575

ETCList of Unclassifed Manufacturers

未分類制造商

Spice Model

High Voltage Diodes - Axial Lead 0.5A - 2.0A ? 70ns ? Hermetic ? JANTX ? JANTXV

VMI

ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER

FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 175°C maximum operat

SSDI

Axial Leaded Rectifiers

Axial Leaded Rectifiers

AMMSEMI

ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER

FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17

SSDI

0.5A-2.0A RECTIFIERS

2,000V - 10,000V working reverse voltage 70 ns Recovery Time Operating Temperature = -65 to +175°C Storage Temperature = -65 to +200°C

DIGITRON

2,000 V - 5,000 V Rectifiers

High Voltage Rectifiers - Formed Lead 0.8A - 3.5A? 30ns - 70ns ? Hermetic

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

High Voltage Rectifiers - Formed Lead

High Voltage Rectifiers - Formed Lead ??????? 0.8A - 3.5A ? 30ns - 70ns ? Hermetic

VMI

ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER

FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17

SSDI

2,000 V - 5,000 V Rectifiers

[VOLTAGE MULTIPLIERS INC.] 2,000 V - 5,000 V Rectifiers 2.0 A - 5.0 A Forward Current 70 ns Recovery Time SURFACE MOUNT HERMETICALLY SEALED

ETCList of Unclassifed Manufacturers

未分類制造商

SURFACE MOUNT RECTIFIERS 70NS RECOVERY, HERMETIC, JANTX, JANTXV

70ns Recovery Hermetic JANTX JANTXV

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

HIGH VOLTAGE DIODES - SURFACE MOUNT

HIGH VOLTAGE DIODES - SURFACE MOUNT

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

70NS RECOVERY, AXIAL LEADED, HERMETIC

HIGH VOLTAGE RECTIFIERS 70ns Recovery ? Axial Leaded ? Hermetic

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER

FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17

SSDI

ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER

FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 175°C maximum operat

SSDI

ULTRA FAST RECOVERY HIGH VOLTAGE RECTIFIER

FEATURES: ● Fast recovery: 70 nsec maximum ● PIV to 10 KV ● Hermetically sealed axial and surface mount package ● Void-free ceramic frit glass construction ● High temperature Category I eutectic metallurgical bond ● Excellent thermal shock performance ● For use in high voltage systems ● 17

SSDI

1N65產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    1N65

  • 制造商

    UTC-IC

  • 制造商全稱

    UTC-IC

  • 功能描述

    1.2A, 650V N-CHANNEL POWER MOSFET

更新時(shí)間:2025-8-21 23:01:00
IC供應(yīng)商 芯片型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
VMI
24+
NA/
6206
原裝現(xiàn)貨,當(dāng)天可交貨,原型號(hào)開(kāi)票
NK/南科功率
2025+
TO-252
986966
國(guó)產(chǎn)
UMW(廣東友臺(tái)半導(dǎo)體)
24+
TO-252
5000
誠(chéng)信服務(wù),絕對(duì)原裝原盤。
UTC
2450+
SOT-223
18500
只做原廠原裝正品終端客戶免費(fèi)申請(qǐng)樣品
MSC
QQ咨詢
CDIP
104
全新原裝 研究所指定供貨商
UMW 友臺(tái)
23+
TO-252
22500
原裝正品,實(shí)單請(qǐng)聯(lián)系
UMW/廣東友臺(tái)半導(dǎo)體
25+
SOT-223-4
32360
UMW/廣東友臺(tái)半導(dǎo)體全新特價(jià)1N65G即刻詢購(gòu)立享優(yōu)惠#長(zhǎng)期有貨
VMI
25+
18000
一級(jí)代理保證進(jìn)口原裝正品假一罰十價(jià)格合理
VOLTAGE MULTIPLIERS
23+
SMD
880000
明嘉萊只做原裝正品現(xiàn)貨
VMI
23+
NA
114
專做原裝正品,假一罰百!

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    1N6117 代理渠道 ,進(jìn)口原裝

    2020-10-19
  • 1N5924BRLG,1N5927BG,1N6295AG,1N6296A,1N6297A,1N6298ARL4

    1N5924BRLG,1N5927BG,1N6295AG,1N6296A,1N6297A,1N6298ARL4

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