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LOW CURRENT OPERATION AT 250 uA

? 1N4099-1 THRU 1N4135-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 ? LOW CURRENT OPERATION AT 250 μ A ? LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS ? METALLURGICALLY BONDED

SILICON 400mA LOW NOISE ZENER DIODES

? 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 ? LEADLESS PACKAGE FOR SURFACE MOUNT ? LOW CURRENT OPERATION AT 250 μA ? METALLURGICALLY BONDED MAXIMUM RATINGS Junction and Storage Temperature: -65°C to +175°C DC Power Dissipation: 50

LOW LEVEL ZENER DIODES LOW CURRENT: 250關A - LOW NOISE

1. Package Style DO-7 2. Vz tolerance: ± 5 3. Forward Voltage (VF) Maximum 1.0 Vdc (1N4614 – 1N4627 IF = 100 mA; 1N4099 – 1N4121 IF = 200 mA) 4. Noise Density measured from 1000 to 3000 Hz. 5. MILITARY SCREENING AVAILABLE

SILICON 500mA LOW NOISE ZENER DIODES

? 1N4099UR-1 THRU 1N4135UR-1 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/435 ? LEADLESS PACKAGE FOR SURFACE MOUNT ? LOW CURRENT OPERATION AT 250 μA ? METALLURGICALLY BONDED MAXIMUM RATINGS Junction and Storage Temperature: -65°C to +175°C DC Power Dissipation: 50

LOW REVERSE LEAKAGE AND LOW NOISE CHARACTERISTICS

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