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位置:TS9410VB_V01 > TS9410VB_V01詳情

TS9410VB_V01中文資料

廠家型號

TS9410VB_V01

文件大小

89.64Kbytes

頁面數(shù)量

4

功能描述

Specification of High Power IR Emitting Diode Chip

數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

簡稱

VISHAY威世科技

生產(chǎn)廠商

Vishay Siliconix

中文名稱

威世科技半導體官網(wǎng)

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TS9410VB_V01數(shù)據(jù)手冊規(guī)格書PDF詳情

DESCRIPTION

TS9410VB is a high power infrared, 940 nm surface emitting

diode in GaAlAs technology with high radiant power and

high speed. Polarity configuration is “n-up”.

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GENERAL INFORMATION

The datasheet is based on Vishay optoelectronics sample testing under certain predetermined and assumed conditions, and is

provided for illustration purpose only. Customers are encouraged to perform testing in actual proposed packaged and used

conditions. Vishay optoelectronics die products are tested using Vishay optoelectronics based quality assurance procedures

and are manufactured using Vishay optoelectronics established processes. Estimates such as those described and set forth in

this datasheet for semiconductor die will vary depending on a number of packaging, handling, use, and other factors. Therefore

sold die may not perform on an equivalent basis to standard package products.

FEATURES

? Package type: chip

? Package form: single chip

? Technology: surface emitter

? Dimensions chip (L x W x H in mm):?

0.260 x 0.260 x 0.17

? Peak wavelength: ? = 940 nm

? Material categorization:?

for definitions of compliance please see

www.vishay.com/doc?99912

更新時間:2025-7-12 9:02:00
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