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位置:SN74TVC3010DWR.A > SN74TVC3010DWR.A詳情

SN74TVC3010DWR.A中文資料

廠家型號

SN74TVC3010DWR.A

文件大小

671.92Kbytes

頁面數量

24

功能描述

10-BIT VOLTAGE CLAMP

數據手冊

下載地址一下載地址二到原廠下載

生產廠商

TI2

SN74TVC3010DWR.A數據手冊規(guī)格書PDF詳情

Designed to be Used in Voltage-Limiting

Applications

6.5-Ω On-State Connection Between Ports

A and B

Flow-Through Pinout for Ease of Printed

Circuit Board Trace Routing

Direct Interface With GTL+ Levels

ESD Protection Exceeds JESD 22

– 2000-V Human-Body Model (A114-A)

– 1000-V Charged-Device Model (C101)

description/ordering information

The SN74TVC3010 provides 11 parallel NMOS

pass transistors with a common gate. The low

on-state resistance of the switch allows

connections to be made with minimal propagation

delay.

The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor. The

low-voltage side of each pass transistor is limited to a voltage set by the reference transistor. This is done to

protect components with inputs that are sensitive to high-state voltage-level overshoots. (See Application

Information in this data sheet.)

All of the transistors in the TVC array have the same electrical characteristics; therefore, any one of them can

be used as the reference transistor. Since, within the device, the characteristics from transistor to transistor are

equal, the maximum output high-state voltage (VOH) is approximately the reference voltage (VREF), with

minimal deviation from one output to another. This is a large benefit of the TVC solution over discrete devices.

Because the fabrication of the transistors is symmetrical, either port connection of each bit can be used as the

low-voltage side, and the I/O signals are bidirectional through each FET.

更新時間:2025-9-21 15:14:00
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