国产精品久久久久无码av色戒,大帝av在线一区二区三区,国产肥熟女视频一区二区三区,大陆少妇xxxx做受,被黑人猛躁10次高潮视频

FEATURES

· SN74CBT3253C Functionally Identical to

Industry-Standard ’3253 Function

· Undershoot Protection for Off-Isolation on A

and B Ports up to –2 V

· Bidirectional Data Flow, With Near-Zero

Propagation Delay

· Low ON-State Resistance (ron) Characteristics

(ron = 3 W Typical)

· Low Input/Output Capacitance Minimizes

Loading and Signal Distortion

(Cio(OFF) = 5.5 pF Typical)

· Data and Control Inputs Provide Undershoot

Clamp Diodes

· Low Power Consumption (ICC = 3 mA Max)

· VCC Operating Range From 4 V to 5.5 V

· Data I/Os Support 0 to 5-V Signaling Levels

(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)

· Control Inputs Can Be Driven by TTL or

5-V/3.3-V CMOS Outputs

· Ioff Supports Partial-Power-Down Mode

Operation

· Latch-Up Performance Exceeds 100 mA Per

JESD 78, Class II

· ESD Performance Tested Per JESD 22

– 2000-V Human-Body Model

(A114-B, Class II)

– 1000-V Charged-Device Model (C101)

· Supports I2C Bus Expansion

· Supports Both Digital and Analog

Applications: USB Interface, Bus Isolation,

Low-Distortion Signal Gating

DESCRIPTION/ORDERING INFORMATION

The SN74CBT3253C is a high-speed TTL-compatible FET multiplexer/demultiplexer with low ON-state

resistance (ron), allowing for minimal propagation delay. Active Undershoot-Protection Circuitry on the A and B

ports of the SN74CBT3253C provides protection for undershoot up to –2 V by sensing an undershoot event and

ensuring that the switch remains in the proper OFF state.

The SN74CBT3253C is organized as two 1-of-4 multiplexer/demultiplexers with separate output-enable (1OE,

2OE) inputs. The select (S0, S1) inputs control the data path of each multiplexer/demultiplexer. When OE is low,

the associated multiplexer/demultiplexer is enabled, and the A port is connected to the B port, allowing

bidirectional data flow between ports. When OE is high, the associated multiplexer/demultiplexer is disabled, and

a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging

current will not backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup

resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.