国产精品久久久久无码av色戒,大帝av在线一区二区三区,国产肥熟女视频一区二区三区,大陆少妇xxxx做受,被黑人猛躁10次高潮视频

1FEATURES

? 9-GHz Bandwidth

? 10-kΩ Differential Small Signal

Transimpedance

? –20-dBm Sensitivity

? 0.9-μARMS Input Referred Noise

? 2.5-mAp-p Input Overload Current

? Received Signal Strength Indication (RSSI)

? 92-mW Typical Power Dissipation

? CML Data Outputs With On-Chip 50-Ω Back-

Termination

? On Chip Supply Filter Capacitor

? Single +3.3-V Supply

? Die Size: 870 μm x 1036 μm

APPLICATIONS

? 10-G Ethernet

? 8-G and 10-G Fibre Channel

? 10-G EPON

? SONET OC-192

? 6-G and 10-G CPRI and OBSAI

? PIN and APD Preamplifier-Receivers

DESCRIPTION

The ONET8551T device is a high-speed, high-gain,

limiting transimpedance amplifier used in optical receivers with data rates up to 11.3 Gbps. It features

low-input referred noise, 9-GHz bandwidth, 10-kΩ

small signal transimpedance, and a received signal

strength indicator (RSSI).

The ONET8551T device is available in die form,

includes an on-chip VCC bypass capacitor, and is

optimized for packaging in a TO can.

The ONET8551T device requires a single +3.3-V

supply. The power-efficient design typically dissipates

less than 95 mW. The device is characterized for

operation from –40°C to 100°C case (IC back-side)

temperature.