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位置:LPC660IMSLASHNOPB.A > LPC660IMSLASHNOPB.A詳情

LPC660IMSLASHNOPB.A中文資料

廠家型號(hào)

LPC660IMSLASHNOPB.A

文件大小

1026Kbytes

頁面數(shù)量

27

功能描述

LPC660 Low Power CMOS Quad Operational Amplifier

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

生產(chǎn)廠商

TI2

LPC660IMSLASHNOPB.A數(shù)據(jù)手冊(cè)規(guī)格書PDF詳情

1FEATURES

2? Rail-to-rail output swing

? Micropower operation: (1 mW)

? Specified for 100 kΩ and 5 kΩ loads

? High voltage gain: 120 dB

? Low input offset voltage: 3 mV

? Low offset voltage drift: 1.3 μV/°C

? Ultra low input bias current: 2 fA

? Input common-mode includes V?

? Operation range from +5V to +15V

? Low distortion: 0.01% at 1 kHz

? Slew rate: 0.11 V/μs

? Full military temp. range available

APPLICATIONS

? High-impedance buffer

? Precision current-to-voltage converter

? Long-term integrator

? High-impedance preamplifier

? Active filter

? Sample-and-Hold circuit

? Peak detector

DESCRIPTION

The LPC660 CMOS Quad operational amplifier is

ideal for operation from a single supply. It features a

wide range of operating voltages from +5V to +15V

and features rail-to-rail output swing in addition to an

input common-mode range that includes ground.

Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this

design. Input VOS, drift, and broadband noise as well

as voltage gain (into 100 kΩ and 5 kΩ) are all equal

to or better than widely accepted bipolar equivalents,

while the power supply requirement is typically less

than 1 mW.

This chip is built with National's advanced Double-

Poly Silicon-Gate CMOS process.

See the LPC662 datasheet for a Dual CMOS

operational amplifier and LPC661 datasheet for a

single CMOS operational amplifier with these same

features.

更新時(shí)間:2025-9-22 10:27:00
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