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位置:LM74610QDGKRQ1.B > LM74610QDGKRQ1.B詳情

LM74610QDGKRQ1.B中文資料

廠(chǎng)家型號(hào)

LM74610QDGKRQ1.B

文件大小

878.39Kbytes

頁(yè)面數(shù)量

31頁(yè)

功能描述

LM74610-Q1 Zero IQ Reverse Polarity Protection Smart Diode Controller

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠(chǎng)下載

生產(chǎn)廠(chǎng)商

TI2

LM74610QDGKRQ1.B數(shù)據(jù)手冊(cè)規(guī)格書(shū)PDF詳情

1 Features

1? Qualified for Automotive Applications

? AEC-Q100 Qualified With the Following Results:

– Exceeds HBM ESD Classification Level 2

– Device CDM ESD Classification Level C4B

? Maximum reverse voltage of 45 V

? No Positive Voltage limitation to Anode Terminal

? Charge Pump Gate Driver for External N-Channel

MOSFET

? Lower Power Dissipation than Schottky

Diode/PFET Solutions

? Low Reverse Leakage Current

? Zero IQ

? Fast 2-μs Response to Reverse Polarity

? -40°C to +125°C Operating Ambient Temperature

? Can be Used in OR-ing Applications

? Meets CISPR25 EMI Specification

? Meets Automotive ISO7637 Transient

Requirements with a Suitable TVS Diode

? No Peak Current Limit

2 Applications

? ADAS

? Infotainment Systems

? Power Tools (Industrial)

? Transmission Control Unit (TCU)

? Battery OR-ing Applications

3 Description

The LM74610-Q1 is a controller device that can be

used with an N-Channel MOSFET in a reverse

polarity protection circuitry. It is designed to drive an

external MOSFET to emulate an ideal diode rectifier

when connected in series with a power source. A

unique advantage of this scheme is that it is not

referenced to ground and thus has Zero Iq.

The LM74610-Q1 controller provides a gate drive for

an external N-Channel MOSFET and a fast response

internal comparator to discharge the MOSFET Gate

in the event of reverse polarity. This fast pull-down

feature limits the amount and duration of reverse

current flow if opposite polarity is sensed. The device

design also meets CISPR25 Class 5 EMI

specifications and automotive ISO7637 transient

requirements with a suitable TVS diode.

更新時(shí)間:2025-9-24 13:01:00
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