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位置:LM5109MAX/NOPB.B > LM5109MAX/NOPB.B詳情

LM5109MAX/NOPB.B中文資料

廠家型號(hào)

LM5109MAX/NOPB.B

文件大小

437.29Kbytes

頁(yè)面數(shù)量

17頁(yè)

功能描述

LM5109 100V/1A Peak Half Bridge Gate Driver

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

生產(chǎn)廠商

TI2

LM5109MAX/NOPB.B數(shù)據(jù)手冊(cè)規(guī)格書(shū)PDF詳情

1FEATURES

2? Drives Both a High Side and Low Side N-

Channel MOSFET

? 1A Peak Output Current (1.0A Sink / 1.0A

Source)

? Independent TTL Compatible Inputs

? Bootstrap Supply Voltage to 118V DC

? Fast Propagation Times (27 ns Typical)

? Drives 1000 pF Load with 15ns Rise and Fall

Times

? Excellent Propagation Delay Matching (2 ns

Typical)

? Supply Rail Under-voltage Lockout

? Low Power Consumption

? Pin Compatible with ISL6700

TYPICAL APPLICATIONS

? Current Fed Push-pull Converters

? Half and Full Bridge Power Converters

? Solid State Motor Drives

? Two Switch Forward Power Converters

PACKAGE

? SOIC-8

? WSON-8 (4 mm x 4 mm)

DESCRIPTION

The LM5109 is a low cost high voltage gate driver,

designed to drive both the high side and the low side

N-Channel MOSFETs in a synchronous buck or a

half bridge configuration. The floating high-side driver

is capable of working with rail voltages up to 100V.

The outputs are independently controlled with TTL

compatible input thresholds. A robust level shifter

technology operates at high speed while consuming low power and providing clean level transitions from

the control input logic to the high side gate driver.

Under-voltage lockout is provided on both the low

side and the high side power rails. The device is

available in the SOIC-8 and the thermally enhanced

WSON-8 packages.

更新時(shí)間:2025-9-21 11:10:00
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TI/德州儀器
23+
SMD
13000
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TI/德州儀器
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1500
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25
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46220
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ns
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