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ISO5451QDWRQ1.B中文資料
ISO5451QDWRQ1.B數(shù)據手冊規(guī)格書PDF詳情
1 Features
1? Qualified for Automotive Applications
? AEC-Q100 Qualified With the Following Results:
– Device Temperature Grade 1: –40°C to
+125°C Ambient Operating Temperature
Range
– Device HBM Classification Level 3A
– Device CDM Classification Level C6
? 50-kV/μs Minimum and 100-kV/μs Typical
Common-Mode Transient Immunity (CMTI)
at VCM = 1500 V
? 2.5-A Peak Source and 5-A Peak Sink Currents
? Short Propagation Delay: 76 ns (Typ),
110 ns (Max)
? 2-A Active Miller Clamp
? Output Short-Circuit Clamp
? Fault Alarm upon Desaturation Detection is
Signaled on FLT and Reset Through RST
? Input and Output Under Voltage Lock-Out (UVLO)
with Ready (RDY) Pin Indication
? Active Output Pull-down and Default Low Outputs
with Low Supply or Floating Inputs
? 3-V to 5.5-V Input Supply Voltage
? 15-V to 30-V Output Driver Supply Voltage
? CMOS Compatible Inputs
? Rejects Input Pulses and Noise Transients
Shorter Than 20 ns
? Isolation Surge Withstand Voltage 10000-VPK
? Safety-Related Certifications:
– 8000-VPK VIOTM and 1420-VPK VIORM
Reinforced Isolation per DIN V VDE V 0884-10
(VDE V 0884-10):2006-12
– 5700-VRMS Isolation for 1 Minute per UL 1577
– CSA Component Acceptance Notice 5A, IEC
60950–1 and IEC 60601–1 End Equipment
Standards
– TUV Certification per EN 61010-1 and EN
60950-1
– GB4943.1-2011 CQC Certification
– All Certifications Complete per UL, VDE, CQC,
TUV and Planned for CSA
2 Applications
? Isolated IGBT and MOSFET Drives in:
– HEV and EV Power Modules
– Industrial Motor Control Drives
– Industrial Power Supplies
– Solar Inverters
– Induction Heating
3 Description
The ISO5451-Q1 is a 5.7-kVRMS, reinforced isolated
gate driver for IGBTs and MOSFETs with 2.5-A
source and 5-A sink current. The input side operates
from a single 3-V to 5.5-V supply. The output side
allows for a supply range from minimum 15 V to
maximum 30 V. Two complementary CMOS inputs
control the output state of the gate driver. The short
propagation time of 76 ns assures accurate control of
the output stage.
An internal desaturation (DESAT) fault detection
recognizes when the IGBT is in an overload
condition. Upon a DESAT detect, the gate driver
output is driven low to VEE2 potential, turning the
IGBT immediately off.
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
TI/德州儀器 |
23+ |
SOP-16 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
|||
TI/德州儀器 |
24+ |
SOP-16 |
60000 |
||||
TI/德州儀器 |
24+ |
SOP-16 |
5000 |
只做原裝正品現(xiàn)貨 |
|||
TI/德州儀器 |
24+ |
SOP-16 |
6000 |
只做原裝,歡迎詢價,量大價優(yōu) |
|||
TI/德州儀器 |
24+ |
SOP-16 |
6000 |
全新原裝,一手貨源,全場熱賣! |
|||
TI德州儀器 |
22+ |
24000 |
原裝正品現(xiàn)貨,實單可談,量大價優(yōu) |
||||
24+ |
6000 |
全新原廠原裝正品現(xiàn)貨,低價出售,實單可談 |
|||||
TI |
500 |
||||||
TI |
三年內 |
1983 |
只做原裝正品 |
||||
TI |
20+ |
SOP-16 |
968 |
就找我吧!--邀您體驗愉快問購元件! |
ISO5451QDWRQ1.B 資料下載更多...
ISO5451QDWRQ1.B 芯片相關型號
- GQM2195G2H7R3BB12
- GQM2195G2H7R3BB12_V01
- GQM2195G2H7R3CB12_V01
- GQM2195G2H7R3DB12
- GQM2195G2H7R3DB12_V01
- ISO5125I
- ISO5125R-100
- ISO5125R-120
- ISO5125R-45
- ISO5125R-65
- ISO5125R-XX
- ISO5451
- ISO5451-Q1
- ISO5451QDWQ1
- ISO5451QDWRQ1
- ISO5451QDWRQ1.A
- ISO5851QDWQ1
- ISO5851QDWRQ1
- ISO5851QDWRQ1.A
- ISO5851QDWRQ1.B
- L530
- M2UDS-5A-R2SLASHCE
- M2UDS-5A-R2SLASHN
- M51994FP
- M51994P
- MP008597
- MP008598
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- MP008600
- MP008601
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