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位置:CSD25501F3T.B > CSD25501F3T.B詳情

CSD25501F3T.B中文資料

廠家型號(hào)

CSD25501F3T.B

文件大小

1083.49Kbytes

頁(yè)面數(shù)量

12頁(yè)

功能描述

CSD25501F3 –20V P-Channel FemtoFET? MOSFET

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

生產(chǎn)廠商

TI2

CSD25501F3T.B數(shù)據(jù)手冊(cè)規(guī)格書PDF詳情

1 Features

? Low on-resistance

? Ultra-low Qg and Qgd

? Ultra-small footprint

– 0.7mm × 0.6mm

? Low profile

– 0.22mm max height

? Integrated ESD protection diode

? Lead and halogen free

? RoHS compliant

2 Applications

? Optimized for load switch applications

? Battery applications

? Handheld and mobile applications

3 Description

This –20V, 64mΩ, P-Channel FemtoFET? MOSFET

is designed and optimized to minimize the footprint

in many handheld and mobile applications. This

technology is capable of replacing standard small

signal MOSFETs while providing a substantial

reduction in footprint size. The integrated 10kΩ clamp

resistor (RC) allows the gate voltage (VGS) to be

operated above the maximum internal gate oxide

value of –6V, depending on duty cycle. The gate

leakage (IGSS) through the diode increases as VGS is

increased above –6V.

更新時(shí)間:2025-9-24 15:01:00
供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
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全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售!
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