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位置:NAND01GW3A2BZB6 > NAND01GW3A2BZB6詳情

NAND01GW3A2BZB6中文資料

廠家型號(hào)

NAND01GW3A2BZB6

文件大小

916.59Kbytes

頁(yè)面數(shù)量

57頁(yè)

功能描述

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit(x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

數(shù)據(jù)手冊(cè)

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簡(jiǎn)稱(chēng)

STMICROELECTRONICS意法半導(dǎo)體

生產(chǎn)廠商

STMicroelectronics

中文名稱(chēng)

意法半導(dǎo)體集團(tuán)官網(wǎng)

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NAND01GW3A2BZB6數(shù)據(jù)手冊(cè)規(guī)格書(shū)PDF詳情

SUMMARY DESCRIPTION

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses

the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.

FEATURES SUMMARY

■ HIGH DENSITY NAND FLASH MEMORIES

– Up to 1 Gbit memory array

– Up to 32 Mbit spare area

– Cost effective solutions for mass storage applications

■ NAND INTERFACE

– x8 or x16 bus width

– Multiplexed Address/ Data

– Pinout compatibility for all densities

■ SUPPLY VOLTAGE

– 1.8V device: VDD = 1.7 to 1.95V

– 3.0V device: VDD = 2.7 to 3.6V

■ PAGE SIZE

– x8 device: (512 + 16 spare) Bytes

– x16 device: (256 + 8 spare) Words

■ BLOCK SIZE

– x8 device: (16K + 512 spare) Bytes

– x16 device: (8K + 256 spare) Words

■ PAGE READ / PROGRAM

– Random access: 12μs (max)

– Sequential access: 50ns (min)

– Page program time: 200μs (typ)

■ COPY BACK PROGRAM MODE

– Fast page copy without external buffering

■ FAST BLOCK ERASE

– Block erase time: 2ms (Typ)

■ STATUS REGISTER

■ ELECTRONIC SIGNATURE

■ CHIP ENABLE ‘DON’T CARE’ OPTION

– Simple interface with microcontroller

■ SERIAL NUMBER OPTION

■ HARDWARE DATA PROTECTION

– Program/Erase locked during Power transitions

■ DATA INTEGRITY

– 100,000 Program/Erase cycles

– 10 years Data Retention

■ RoHS COMPLIANCE

– Lead-Free Components are Compliant with the RoHS Directive

■ DEVELOPMENT TOOLS

– Error Correction Code software and hardware models

– Bad Blocks Management and Wear Leveling algorithms

– File System OS Native reference software

– Hardware simulation models

NAND01GW3A2BZB6產(chǎn)品屬性

  • 類(lèi)型

    描述

  • 型號(hào)

    NAND01GW3A2BZB6

  • 制造商

    STMICROELECTRONICS

  • 制造商全稱(chēng)

    STMicroelectronics

  • 功能描述

    128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit(x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

更新時(shí)間:2025-7-1 15:14:00
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STMicroelectronics 意法半導(dǎo)體集團(tuán)

中文資料: 161640條

意法半導(dǎo)體 (STMicroelectronics) 成立于1987年,總部位于瑞士日內(nèi)瓦和法國(guó)巴黎,是一家全球領(lǐng)先的半導(dǎo)體公司。意法半導(dǎo)體專(zhuān)注于設(shè)計(jì)、制造和銷(xiāo)售各種半導(dǎo)體解決方案,產(chǎn)品廣泛應(yīng)用于汽車(chē)、工業(yè)、消費(fèi)電子、通信等領(lǐng)域。 意法半導(dǎo)體的產(chǎn)品包括微控制器、模擬集成電路、功率半導(dǎo)體、傳感器等。公司擁有多個(gè)研發(fā)中心和生產(chǎn)基地,致力于技術(shù)創(chuàng)新和研發(fā)投入。意法半導(dǎo)體在全球范圍內(nèi)擁有廣泛的客戶群和合作伙伴,為客戶提供高品質(zhì)的產(chǎn)品和解決方案。 公司的使命是通過(guò)半導(dǎo)體技術(shù)推動(dòng)智能化和可持續(xù)發(fā)展,助力客戶取得成功。意法半導(dǎo)體不僅注重商業(yè)成功,還注重社會(huì)責(zé)任、環(huán)境保護(hù)和可持續(xù)經(jīng)營(yíng)。企業(yè)價(jià)值觀包括創(chuàng)新、尊重