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NAND01GW3A2BV6E中文資料

廠(chǎng)家型號(hào) | NAND01GW3A2BV6E |
文件大小 | 916.59Kbytes |
頁(yè)面數(shù)量 | 57頁(yè) |
功能描述 | 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit(x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
數(shù)據(jù)手冊(cè) | |
簡(jiǎn)稱(chēng) | STMICROELECTRONICS【意法半導(dǎo)體】 |
生產(chǎn)廠(chǎng)商 | STMicroelectronics |
中文名稱(chēng) | 意法半導(dǎo)體集團(tuán)官網(wǎng) |
LOGO |
NAND01GW3A2BV6E數(shù)據(jù)手冊(cè)規(guī)格書(shū)PDF詳情
SUMMARY DESCRIPTION
The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses
the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The devices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width.
FEATURES SUMMARY
■ HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32 Mbit spare area
– Cost effective solutions for mass storage applications
■ NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
■ SUPPLY VOLTAGE
– 1.8V device: VDD = 1.7 to 1.95V
– 3.0V device: VDD = 2.7 to 3.6V
■ PAGE SIZE
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
■ BLOCK SIZE
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
■ PAGE READ / PROGRAM
– Random access: 12μs (max)
– Sequential access: 50ns (min)
– Page program time: 200μs (typ)
■ COPY BACK PROGRAM MODE
– Fast page copy without external buffering
■ FAST BLOCK ERASE
– Block erase time: 2ms (Typ)
■ STATUS REGISTER
■ ELECTRONIC SIGNATURE
■ CHIP ENABLE ‘DON’T CARE’ OPTION
– Simple interface with microcontroller
■ SERIAL NUMBER OPTION
■ HARDWARE DATA PROTECTION
– Program/Erase locked during Power transitions
■ DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
■ RoHS COMPLIANCE
– Lead-Free Components are Compliant with the RoHS Directive
■ DEVELOPMENT TOOLS
– Error Correction Code software and hardware models
– Bad Blocks Management and Wear Leveling algorithms
– File System OS Native reference software
– Hardware simulation models
NAND01GW3A2BV6E產(chǎn)品屬性
- 類(lèi)型
描述
- 型號(hào)
NAND01GW3A2BV6E
- 制造商
STMICROELECTRONICS
- 制造商全稱(chēng)
STMicroelectronics
- 功能描述
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit(x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
STMicroelectronics |
18+ |
ICFLASH1GBIT48TSOP |
6580 |
公司原裝現(xiàn)貨 |
|||
ST |
24+ |
TSSOP |
20000 |
全新原廠(chǎng)原裝,進(jìn)口正品現(xiàn)貨,正規(guī)渠道可含稅!! |
|||
ST |
20+ |
TSSOP48 |
19570 |
原裝優(yōu)勢(shì)主營(yíng)型號(hào)-可開(kāi)原型號(hào)增稅票 |
|||
ST |
23+ |
TSSOP |
12500 |
一級(jí)代理,原裝現(xiàn)貨,價(jià)格優(yōu)勢(shì) |
|||
ST/意法 |
24+ |
NA |
80000 |
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增 |
|||
STM |
20+ |
TSOP-48 |
1001 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
|||
ST/意法 |
23+ |
TSOP |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
|||
ST |
23+ |
TSSOP |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
|||
ST |
22+ |
48TSOP |
9000 |
原廠(chǎng)渠道,現(xiàn)貨配單 |
|||
NUMONYX |
2016+ |
FBGA |
6528 |
只做進(jìn)口原裝現(xiàn)貨!或訂貨,假一賠十! |
NAND01GW3A2BV6E 資料下載更多...
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Datasheet數(shù)據(jù)表PDF頁(yè)碼索引
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STMicroelectronics 意法半導(dǎo)體集團(tuán)
意法半導(dǎo)體 (STMicroelectronics) 成立于1987年,總部位于瑞士日內(nèi)瓦和法國(guó)巴黎,是一家全球領(lǐng)先的半導(dǎo)體公司。意法半導(dǎo)體專(zhuān)注于設(shè)計(jì)、制造和銷(xiāo)售各種半導(dǎo)體解決方案,產(chǎn)品廣泛應(yīng)用于汽車(chē)、工業(yè)、消費(fèi)電子、通信等領(lǐng)域。 意法半導(dǎo)體的產(chǎn)品包括微控制器、模擬集成電路、功率半導(dǎo)體、傳感器等。公司擁有多個(gè)研發(fā)中心和生產(chǎn)基地,致力于技術(shù)創(chuàng)新和研發(fā)投入。意法半導(dǎo)體在全球范圍內(nèi)擁有廣泛的客戶(hù)群和合作伙伴,為客戶(hù)提供高品質(zhì)的產(chǎn)品和解決方案。 公司的使命是通過(guò)半導(dǎo)體技術(shù)推動(dòng)智能化和可持續(xù)發(fā)展,助力客戶(hù)取得成功。意法半導(dǎo)體不僅注重商業(yè)成功,還注重社會(huì)責(zé)任、環(huán)境保護(hù)和可持續(xù)經(jīng)營(yíng)。企業(yè)價(jià)值觀(guān)包括創(chuàng)新、尊重