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M295V040-120K3R中文資料
M295V040-120K3R數(shù)據(jù)手冊規(guī)格書PDF詳情
DESCRIPTION
The M29F040 is a non-volatile memory that may be erased electrically at the block level, and programmed Byte-by-Byte.
■ M29F040 is replaced by the M29F040B
■ 5V ± 10 SUPPLY VOLTAGE for PROGRAM,
ERASE and READ OPERATIONS
■ FAST ACCESS TIME: 70ns
■ BYTE PROGRAMMING TIME: 10μs typical
■ ERASE TIME
– Block: 1.0 sec typical
– Chip: 2.5 sec typical
■ PROGRAM/ERASE CONTROLLER (P/E.C.)
– Program Byte-by-Byte
– Data Polling and Toggle bits Protocol for
P/E.C. Status
■ MEMORY ERASE in BLOCKS
– 8 Uniform Blocks of 64 KBytes each
– Block Protection
– Multiblock Erase
■ ERASE SUSPEND and RESUME MODES
■ LOW POWER CONSUMPTION
– Read mode: 8mA typical (at 12MHz)
– Stand-by mode: 25μA typical
– Automatic Stand-by mode
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ 20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code: E2h
M295V040-120K3R產(chǎn)品屬性
- 類型
描述
- 型號
M295V040-120K3R
- 制造商
STMICROELECTRONICS
- 制造商全稱
STMicroelectronics
- 功能描述
4 Mbit 512Kb x8, Uniform Block Single Supply Flash Memory
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
Matsuo(松尾電機) |
24+ |
8215 |
現(xiàn)貨供應(yīng),當天可交貨!免費送樣,原廠技術(shù)支持!!! |
||||
TE |
20+ |
連接器 |
48 |
就找我吧!--邀您體驗愉快問購元件! |
|||
MYRRA |
25+ |
N/A |
14185 |
原裝現(xiàn)貨17377264928微信同號 |
|||
M |
24+ |
NA/ |
3297 |
原裝現(xiàn)貨,當天可交貨,原型號開票 |
|||
M |
2003 |
6 |
公司優(yōu)勢庫存 熱賣中!! |
||||
MINDSPEED |
24+ |
BGA |
20 |
原裝現(xiàn)貨假一罰十 |
|||
24+ |
3000 |
公司存貨 |
|||||
MNDSPEED |
23+ |
BGA |
3000 |
一級代理原廠VIP渠道,專注軍工、汽車、醫(yī)療、工業(yè)、 |
|||
MICROCHIP/微芯 |
24+ |
18-DIP |
7671 |
原裝正品.優(yōu)勢專營 |
M295V040-120K3R 資料下載更多...
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STMICROELECTRONICS相關(guān)芯片制造商
Datasheet數(shù)據(jù)表PDF頁碼索引
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