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M28W160BB856T中文資料

廠家型號

M28W160BB856T

文件大小

337.77Kbytes

頁面數(shù)量

45

功能描述

16 Mbit (1Mb x16, Boot Block) 3V Supply Flash Memory

16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory

數(shù)據(jù)手冊

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STMICROELECTRONICS意法半導(dǎo)體

生產(chǎn)廠商

STMicroelectronics

中文名稱

意法半導(dǎo)體集團官網(wǎng)

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M28W160BB856T數(shù)據(jù)手冊規(guī)格書PDF詳情

SUMMARY DESCRIPTION

The M28W160B is a 16 Mbit (1 Mbit x 16) non-volatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

The device features an asymmetrical blocked architecture. The M28W160B has an array of 39 blocks: 8 Parameter Blocks of 4 KWord and 31 Main Blocks of 32 KWord. M28W160BT has the Parameter Blocks at the top of the memory address space while the M28W160BB locates the Parameter Blocks starting from the bottom. The memory maps are shown in Figure 6, Block Addresses.

Parameter blocks 0 and 1 can be protected from accidental programming or erasure. Each block can be erased separately. Erase can be suspended in order to perform either read or program in any other block and then resumed. Program can be suspended to read data in any other block and then resumed. Each block can be programmed and erased over 100,000 cycles.

Program and Erase commands are written to the Command Interface of the memory. An on-chip Program/Erase Controller takes care of the timings necessary for program and erase operations. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

FEATURES SUMMARY

■ SUPPLY VOLTAGE

– VDD = 2.7V to 3.6V Core Power Supply

– VDDQ= 1.65V to 3.6V for Input/Output

– VPP = 12V for fast Program (optional)

■ ACCESS TIME: 70, 85, 90,100ns

■ PROGRAMMING TIME

– 10μs typical

– Double Word Programming Option

■ COMMON FLASH INTERFACE

– 64 bit Security Code

■ MEMORY BLOCKS

– Parameter Blocks (Top or Bottom location)

– Main Blocks

■ BLOCK PROTECTION on TWO PARAMETER BLOCKS

– WP for Block Protection

■ AUTOMATIC STAND-BY MODE

■ PROGRAM and ERASE SUSPEND

■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

■ ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Top Device Code, M28W160BT: 90h

– Bottom Device Code, M28W160BB: 91h

M28W160BB856T產(chǎn)品屬性

  • 類型

    描述

  • 型號

    M28W160BB856T

  • 制造商

    STMICROELECTRONICS

  • 制造商全稱

    STMicroelectronics

  • 功能描述

    16 Mbit(1Mb x16, Boot Block) 3V Supply Flash Memory

更新時間:2025-7-10 9:17:00
供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
STMICROELECT
05+
原廠原裝
4320
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ST
23+
TSOP-48
5000
原裝正品,假一罰十
ST/意法
23+
TSOP
13000
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種
MAXIC
23+24
N.SO
27960
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ST
24+
TSOP
3200
十年品牌!原裝現(xiàn)貨!!!
24+
3000
公司存貨
ST
2016+
SSOP-48
6528
只做原廠原裝現(xiàn)貨!終端客戶個別型號可以免費送樣品!
ST
2020+
TSOP
621
百分百原裝正品 真實公司現(xiàn)貨庫存 本公司只做原裝 可
ST
0103+
SSOP-48
124
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ST
22+
SSOP-48
2000
原裝現(xiàn)貨庫存.價格優(yōu)勢

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STMicroelectronics 意法半導(dǎo)體集團

中文資料: 161989條

意法半導(dǎo)體 (STMicroelectronics) 成立于1987年,總部位于瑞士日內(nèi)瓦和法國巴黎,是一家全球領(lǐng)先的半導(dǎo)體公司。意法半導(dǎo)體專注于設(shè)計、制造和銷售各種半導(dǎo)體解決方案,產(chǎn)品廣泛應(yīng)用于汽車、工業(yè)、消費電子、通信等領(lǐng)域。 意法半導(dǎo)體的產(chǎn)品包括微控制器、模擬集成電路、功率半導(dǎo)體、傳感器等。公司擁有多個研發(fā)中心和生產(chǎn)基地,致力于技術(shù)創(chuàng)新和研發(fā)投入。意法半導(dǎo)體在全球范圍內(nèi)擁有廣泛的客戶群和合作伙伴,為客戶提供高品質(zhì)的產(chǎn)品和解決方案。 公司的使命是通過半導(dǎo)體技術(shù)推動智能化和可持續(xù)發(fā)展,助力客戶取得成功。意法半導(dǎo)體不僅注重商業(yè)成功,還注重社會責(zé)任、環(huán)境保護和可持續(xù)經(jīng)營。企業(yè)價值觀包括創(chuàng)新、尊重