国产精品久久久久无码av色戒,大帝av在线一区二区三区,国产肥熟女视频一区二区三区,大陆少妇xxxx做受,被黑人猛躁10次高潮视频

Features

■ High voltage rail up to 600 V

■ BCD off line technology

■ 15.6 V Zener clamp on Vs

■ Driver current capability:

– Sink current = 270 mA

– Source current = 170 mA

■ Very low start up current: 150 mA

■ Undervoltage lockout with hysteresis

■ Programmable oscillator frequency

■ Dead time 1.25 μs (L6571A) or 0.72 μs

(L6571B)

■ dV/dt immunity up to ±50 V/ns

■ ESD protection

Description

The device is a high voltage half bridge driver with

built in oscillator. The frequency of the oscillator

can be programmed using external resistor and

capacitor.

The internal circuitry of the device allows it to be

driven also by external logic signal.

The output drivers are designed to drive external

nchannel power MOSFET and IGBT. The internal

logic assures a dead time to avoid crossconduction of the power devices.

Two version are available: L6571A and L6571B.

They differ in the internal dead time: 1.25μs and

0.72 μs (typ.)