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Features

? Production testing and qualification follow the

standard AS6294/1

? 100V, 7.5mΩ eGaN FET with integrated 4.5V gate

driver

? Wide driver bias range of 4.5V to 13.2V

? Up to 16.5V logic inputs (regardless of VDD level)

? Inverting and non-inverting inputs

? Integrated driver optimized for enhancement-mode

GaN FETs

? Internal 4.5V regulated gate drive voltage

? Full military temperature range operation

? TA = -55°C to +125°C

? TJ = -55°C to +150°C

? Radiation hardness assurance (lot-by-lot)

? Low dose rate (0.01rad(Si)/s): 75krad(Si)

? SEE hardness for Driver (see the SEE test report)

? No SEB/L LETTH, VDD = 16.5V: 86MeV?cm2/mg

? No SET, LETTH, VDD = 13.2V: 86MeV?cm2/mg

? SEE hardness for GaN FET (see the SEE test

report)

? No SEB/L LETTH, VDS = 100V: 86MeV?cm2/mg