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PHB價(jià)格

參考價(jià)格：￥231.7565

型號(hào)：PHB.1B.306.CLLD72Z 品牌：LEMO 備注：這里有PHB多少錢，2025年最近7天走勢(shì)，今日出價(jià)，今日競(jìng)價(jià)，PHB批發(fā)/采購(gòu)報(bào)價(jià)，PHB行情走勢(shì)銷售排行榜，PHB報(bào)價(jià)。

型號(hào)	功能描述	生產(chǎn)廠家&企業(yè)	LOGO
PHB	Short Stroke Pushbutton Switches Features/Benefits ?Momentaryorlatchingaction ?Lowcost,reliablecontactdesign ?2&4poleconfigurations ?Sealedcontacts ?Optionalbuttons ?RoHScompliant design TypicalApplications ?Computersandperipherals ?Instrumentationand measurementequipment ?Non-power,on-o	CK-COMPONENTS C&K Components
PHB	High Current - High voltage ??Good Pulse Current rating 文件：273.77 Kbytes Page：6 Pages	ILLINOISCAPACITORIllinois Capacitor, Inc. 伊利諾斯伊利諾斯電容器股份有限公司
PHB	Momentary or latching action 文件：260.06 Kbytes Page：3 Pages	CK-COMPONENTS C&K Components
PHB	Cylindrical pack 文件：350.19 Kbytes Page：3 Pages	EATONEaton All Rights Reserved. 伊頓伊頓公司
PHB_V01	Short Stroke Pushbutton Switches Features/Benefits ?Momentaryorlatchingaction ?Lowcost,reliablecontactdesign ?2&4poleconfigurations ?Sealedcontacts ?Optionalbuttons ?RoHScompliant design TypicalApplications ?Computersandperipherals ?Instrumentationand measurementequipment ?Non-power,on-o	CK-COMPONENTS C&K Components
PHB100N03LT	N-channel enhancement mode field-effect transistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?1technology. Features ■TrenchMOS?technology ■Lowon-stateresistance ■Avalancheruggednessrated ■Logiclevelcompatible ■Surfacemountpackage. Applications ■DCtoDCconverters ■	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB100N03LT	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB101NQ03LT	TrenchMOS??logic level FET Description N-channellogiclevelfield-effectpowertransistorinaplasticpackageusingTrenchMOS?technology. Productavailability: PHB101NQ03LTinSOT404(D2-PAK) PHD101NQ03LTinSOT428(D-PAK). Features ■Lowgatecharge ■Lowon-stateresistance. Applications ■Optimizedas	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB101NQ04LT	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB101NQ04T	N-channel TrenchMOS standard level FET Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS?technology. Features ■Standardlevelthreshold ■Verylowon-stateresistance. Applications ■Motors,lamps,solenoids ■Uninterruptiblepowersupplies ■DC-to-DCconverters ■Ge	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB101NQ04T	N-channel TrenchMOS standard level FET	ETC 知名廠家	ETC
PHB108NQ03LT	TrenchMOS logic level FET Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?technology. Productavailability: PHP108NQ03LTinSOT78(TO-220AB) PHB108NQ03LTinSOT404(D2-PAK) PHD108NQ03LTinSOT428(D-PAK). Features ■Logiclevelcompatible ■	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB108NQ03LT	N-channel TrenchMOS logic level FET	ETC 知名廠家	ETC
PHB108NQ03LT	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·Switch-modePowerSupplies ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB10N40	PowerMOS transistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforusei	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB10N40	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·Switch-modePowerSupplies ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB10N40T	N-Channel 650 V (D-S) MOSFET FEATURES ?Reducedtrr,Qrr,andIRRM ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?LowswitchinglossesduetoreducedQrr ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) APPLICATIONS ?Telecommunications -Serverandtelecompowersupplies ?Light	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺(tái)灣）有限公司
PHB110NQ06LT	N-channel TrenchMOS logic level FET Description LogiclevelN-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?technology. Features ■Logiclevelthreshold ■Lowon-stateresistance. Applications ■Motors,lamps,solenoids ■Uninterruptiblepowersupplies ■DC-to-DCconve	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB110NQ06LT	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB110NQ08LT	N-channel TrenchMOS logic level FET Description LogiclevelN-channelenhancementmodefield-effecttransistorinaplasticpackage usingTrenchMOS?technology. Features ■Logiclevelthreshold ■Verylowon-stateresistance. Applications ■Motors,lamps,solenoids ■Uninterruptiblepowersupplies ■DC	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB110NQ08LT	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.5mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB110NQ08T	N-channel TrenchMOS standard level FET 1.1Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplastic packageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforusein computing,communications,consumerandindustrialapplicationsonly. 1.2Featuresandbenefits L	NEXPERIANexperia B.V. All rights reserved 安世安世半導(dǎo)體(中國(guó))有限公司
PHB112N06T	N-channel enhancement mode field-effect transistor Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability: PHP112N06TinSOT78(TO-220AB) PHB112N06TinSOT404(D2-PAK). Features ■Fastswitching ■Verylowon-stateresistance. Applications ■Genera	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB112N06T	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8.0mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB119NQ06T	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7.1mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB11N03LT	N-channel TrenchMOS transistor Logic level FET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES ?’Trench’technology ?Lowon-stateresistance ?Fastswitching ?Logiclevelcompatible Applications:- ?d.c.tod.c.converters ?switche	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB11N03LT	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB11N06LT	TrenchMOS transistor Logic level FET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB11N06LT	N-channel TrenchMOS transistor Logic level FET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. ThePHP11N06LTissuppliedintheSOT78(TO220AB)conventionalleadedpackage. ThePHB11N06LTissuppliedintheSOT404(D2PAK)surfacemountingpa	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB11N06LT	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB11N50E	PowerMOS transistors Avalanche energy rated VDSS=500V ID=10.4A RDS(ON)≤0.6? GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpur	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB11N50E	PowerMOS transistors Avalanche energy rated VDSS=500V ID=10.4A RDS(ON)≤0.6? GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpur	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB11N50E	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=11A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.55Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB125N06LT	TrenchMOS transistor Logic level FET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP125N06LTissu	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB125N06LT	TrenchMOS transistor Logic level FET GENERALDESCRIPTION N-channelenhancementmode,logiclevel,field-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP125N06LTissu	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB125N06LT	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=7mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB125N06T	TrenchMOS transistor Standard level FET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemounting.Using’trench’technologythedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintended	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB125N06T	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=8mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB129NQ04LT	N-channel TrenchMOS logic level FET Description LogiclevelN-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?technology. Features ■Logiclevelthreshold ■Verylowon-stateresistance. Applications ■Motors,lamps,solenoids ■Uninterruptiblepowersupplies ■DC-to-DCconverters ■	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB129NQ04LT	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB12NQ15T	N-channel TrenchMOS transistor GENERALDESCRIPTION N-channelenhancementmodefield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. FEATURES ?’Trench’technology ?	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB12NQ15T	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=12.5A@TC=25℃ ·DrainSourceVoltage-VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB130N03LT	TrenchMOS transistor Logic level FET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB130N03LT	TrenchMOS transistor Logic level FET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicehasverylowon-stateresistance.Itisintendedforuseindctodcconvertersandgeneralpurposeswitchingapplications. ThePHP130N03LTissupp	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB130N03LT	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=5V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB130N03T	TrenchMOS transistor Standard level FET GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintend	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB13N40E	PowerMOS transistors Avalanche energy rated GENERALDESCRIPTION N-channel,enhancementmodefield-effectpowertransistor,intendedforuseinoff-lineswitchedmodepowersupplies,T.V.andcomputermonitorpowersupplies,d.c.tod.c.converters,motorcontrolcircuitsandgeneralpurposeswitchingapplications. ThePHP13N40Eissupplie	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB13N40E	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.35Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB143NQ04T	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.2mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB145NQ06T	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=55V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB14NQ20T	TrenchMOS transistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?technology. Productavailability: PHP14NQ20TinSOT78(TO-220AB) PHB14NQ20TinSOT404(D2-PAK) PHD14NQ20TinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB14NQ20T	TrenchMOS standard level FET Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?technology. Productavailability: PHP14NQ20TinSOT78(TO-220AB) PHB14NQ20TinSOT404(D2-PAK) PHD14NQ20TinSOT428(D-PAK). Features ■Lowon-stateresistance ■Fastswitching	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB14NQ20T	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=14A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.23Ω(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB152NQ03LT	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=25V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB153NQ08LT	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.5mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB160N03T	N-channel enhancement mode field-effect transistor Description N-channelenhancementmodefield-effecttransistorinaplasticpackageusingTrenchMOS?1technology. Productavailability: PHB160N03TinSOT404(D2-PAK). Features ■TrenchMOS?technology ■Verylowon-stateresistance. Applications ■DCtoDCconverters ■Switched-modepo	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB160N03T	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB160NQ08T	N-channel TrenchMOS standard level FET Description N-channelenhancementmodefield-effectpowertransistorinaplasticpackageusingTrenchMOS?technology. Features ■Standardlevelthreshold ■Verylowon-stateresistance. Applications ■Motors,lamps,solenoids ■Uninterruptablepowersupplies ■DC-to-DCconverters ■Ge	PhilipsPhilips Semiconductors 飛利浦荷蘭皇家飛利浦	Philips
PHB160NQ08T	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=75V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=5.6mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司
PHB174NQ04LT	isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=75A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4mΩ(Max)@VGS=10V DESCRIPTION ·DC-to-DCConverter ·GeneralIndustrialApplications ·PowerMotorControl	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司

PHB產(chǎn)品屬性

類型
描述
型號(hào)
PHB
功能描述
環(huán)形推拉式連接器 FREE RECEPTACLE CABLE COLLET
RoHS
否
制造商
Hirose Connector
產(chǎn)品類型
Connectors
系列
HR10
觸點(diǎn)類型
Socket(Female)
外殼類型
Receptacle
觸點(diǎn)數(shù)量
4
外殼大小
7
安裝風(fēng)格
Panel
端接類型
Solder
電流額定值
2 A

PHB供應(yīng)商更多...

更新時(shí)間：2025-7-20 23:00:00

IC供應(yīng)商	芯片型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市得捷芯城科技有限公司	PHB100N03LT	PHI	24+	NA/	2270	優(yōu)勢(shì)代理渠道,原裝正品,可全系列訂貨開增值稅票	詢價(jià)
深圳市高捷芯城科技有限公司	PHB45NQ10T	恩XP	24+	標(biāo)準(zhǔn)封裝	9548	全新原裝正品/價(jià)格優(yōu)惠/質(zhì)量保障	詢價(jià)
深圳市納艾斯科技有限公司	PHB95N03LT	PHI	24+	TO263	8000	只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開13%增	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	PHB2.0-12P	宏運(yùn)電子	21+	VQFN	9800	只做原裝正品假一賠十!正規(guī)渠道訂貨!	詢價(jià)
深圳市科芯源微電子有限公司	PHB45N03LT其他被動(dòng)元件	PHI	23+	TO-263	100586	全新原廠原裝正品現(xiàn)貨,可提供技術(shù)支持、樣品免費(fèi)!	詢價(jià)
深圳市金芯世紀(jì)電子有限公司	PHB100N03LT	PHI	22+	SOT263	100000	代理渠道/只做原裝/可含稅	詢價(jià)
深圳市昌和盛利電子有限公司	PHB1006	NIEC	23+	模塊	3562		詢價(jià)
深圳市匯萊威科技有限公司	PHB98N03LT	恩XP	24+	TO-263	504495	免費(fèi)送樣原盒原包現(xiàn)貨一手渠道聯(lián)系	詢價(jià)
深圳市勝彬電子有限公司	PHB07N03LT	PHI	22+	TO	3000	原裝正品,支持實(shí)單	詢價(jià)
深圳市恒達(dá)億科技有限公司	PHB100N03LT	PHI	25+	TO-263	4500	全新原裝、誠(chéng)信經(jīng)營(yíng)、公司現(xiàn)貨銷售!	詢價(jià)

PHB芯片相關(guān)品牌

PHB規(guī)格書下載地址

PHB參數(shù)引腳圖相關(guān)

rfid技術(shù)
rfid
rc正弦波振蕩電路
rc低通濾波器
rclamp0524p
r803
r800
r31
qsc6270
Q100
pt2262
pt1000
pt100
pled
pl2303
pl-21
PKE
PIN二極管
pic微控制器
pic單片機(jī)
PHFM105
PHFM104
PHFM103
PHFM102
PHFM101
PHE850
PHE844
PHE843
PHE840M
PHE840E
PHE820M
PHE820E
PHE820
PHE450
PHE448
PHE428
PHE427
PHE426
PHC2300
PHB-5R0V255-R
PHB-5R0V155-R
PHB-5R0H505-R
PHB-5R0H305-R
PHB-5R0H255-R
PHB-5R0H155-R
PHB47NQ10T,118
PHB45NQ15T,118
PHB45NQ10T,118
PHB33NQ20T,118
PHB32N06LT,118
PHB2UOATS1A
PHB2N50
PHB29N08T,118
PHB27NQ10T.118
PHB27NQ10T,118
PHB21N06LT,118
PHB20NQ20T,118
PHB20N06T,118
PHB191NQ06LT,118
PHB.1B.306.CLLD72Z
PHAP33
PHA2UOA
PHA2UEESN
PHA2UEE
PH-A280
PHA-22H
PHA-22+
PHA-22
PHA-202
PHA-1H
PHA-1-D
PHA-11+
PHA-11
PHA-101
PHA-1+
PHA-1
PHA.1B.308.CLLD42
PHA.0B.302.CLLD52Z
PH9930L
PH975C6
PH97005
PH967C6
PH965C6
PH9185.083NL
PH9185.043NLT
PH9185.038NL
PH9185.034NLT
PH9185.021NLT
PH9185.021NL
PH9185.013NLT
PH9185.013NL
PH9185.012NLT
PH9185.012NL
PH9185.011NLT
PH9185.011NL
PH9030L,115
PH8230E,115
PH7-P
PH75S48-28

PHB數(shù)據(jù)表相關(guān)新聞

PHA227MKP3780ME4電容器
KEMET的電容器具有卓越的電氣性能，旨在滿足汽車應(yīng)用的極高要求
2023-4-25
PHE840MB6470MB16R17
PHE840MB6470MB16R17
2022-10-13
PGH20016AM
PGH20016AMDFA200AA160DFA150AA160模塊現(xiàn)貨元器件配單
2021-12-28
PHB101NQ03LT，一站式配齊，興中揚(yáng)電子科技只售原裝貨，買IC找興中揚(yáng)
PHB101NQ03LT，一站式配齊，興中揚(yáng)電子科技只售原裝貨，買IC找興中揚(yáng)
2019-11-30
PHB系列LED驅(qū)動(dòng)器PHB30W-0500-42
ERPPower的高性能可編程恒流Class2/ClassII驅(qū)動(dòng)器，具有三模調(diào)光功能
2019-9-20
PH6325L公司原裝現(xiàn)貨
瀚佳科技（深圳）有限公司專業(yè)進(jìn)口電子元器件代理商
2019-8-23

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