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SWITCHMODE Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode

The MJ10009 Darlington transistor is designed for high–voltage, high–speed, power switching in Inductive circuits where fall time is critical. It is particularly suited for line operated switchmode applications such as:

? Switching Regulators

? Inverters

? Solenoid and Relay Drivers

? Motor Controls

? Deflection Circuits

Fast Turn–Off Times

1.6 μs (max) Inductive Crossover Time – 10 A, 100°C

3.5 μs (max) Inductive Storage Time – 10 A, 100°C

Operating Temperature Range –65 to +200°C

100°C Performance Specified for:

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents