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NAND512W4A2CN6F中文資料
NAND512W4A2CN6F數(shù)據(jù)手冊規(guī)格書PDF詳情
Description
The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that
uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page
family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C
have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of
a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on
whether the device has a x8 or x16 bus width.
The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or
x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate
to other densities without changing the footprint.
To extend the lifetime of NAND Flash devices it is strongly recommended to implement an
Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000
program/erase cycles for each block. A Write Protect pin is available to give a hardware
protection against program and erase operations.
Features
● High density NAND Flash memories
– 512 Mbit memory array
– Cost effective solutions for mass storage applications
● NAND interface
– x 8 or x 16 bus width
– Multiplexed Address/ Data
● Supply voltage: 1.8 V, 3.0 V
● Page size
– x 8 device: (512 + 16 spare) bytes
– x 16 device: (256 + 8 spare) words
● Block size
– x 8 device: (16 K + 512 spare) bytes
– x 16 device: (8 K + 256 spare) words
● Page Read/Program
– Random access: 12 μs (3 V)/15 μs (1.8 V) (max)
– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)
– Page Program time: 200 μs (typ)
● Copy Back Program mode
● Fast Block Erase: 2 ms (typ)
● Status Register
● Electronic signature
● Chip Enable ‘don’t care’
● Serial Number option
● Hardware Data Protection
– Program/Erase locked during Power transitions
● Data integrity
– 100,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
● ECOPACK? packages
● Development tools
– Error Correction Code models
– Bad Blocks Management and Wear Leveling algorithms
– Hardware simulation models
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NUMONYX |
0919- |
87 |
公司優(yōu)勢庫存 熱賣中! |
||||
Lyontek |
23+24 |
BGA |
27960 |
原裝現(xiàn)貨.優(yōu)勢熱賣.終端BOM表可配單 |
|||
ST |
2447 |
BGA |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
|||
ST |
25+23+ |
BGA |
36613 |
絕對原裝正品全新進(jìn)口深圳現(xiàn)貨 |
|||
ST |
24+ |
BGA |
80000 |
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增 |
|||
ST |
24+ |
BGA |
35200 |
一級代理分銷/放心采購 |
|||
STM |
23+ |
BGA |
6000 |
原裝正品假一罰百!可開增票! |
|||
ST |
744 |
BGA |
20 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
|||
ST |
23+ |
BGA |
12800 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
|||
ST |
23+ |
BGA |
90000 |
一定原裝正品 |
NAND512W4A2CN6F 資料下載更多...
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Datasheet數(shù)據(jù)表PDF頁碼索引
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numonyx
Numonyx是一家曾經(jīng)存在的存儲技術(shù)公司,于2008年由英特爾(Intel)和STMicroelectronics共同創(chuàng)立。Numonyx專注于非易失性存儲器(NVM)技術(shù)和閃存存儲器技術(shù),為客戶提供各種存儲解決方案和產(chǎn)品。 Numonyx的產(chǎn)品包括閃存存儲器、嵌入式存儲器、非易失性存儲器等,在計算機(jī)、消費(fèi)電子、通信、汽車等領(lǐng)域得到廣泛應(yīng)用。公司致力于技術(shù)創(chuàng)新與研發(fā),不斷提升產(chǎn)品性能、可靠性和創(chuàng)新性,以滿足客戶不斷增長的需求。 2010年,美國存儲技術(shù)公司Micron Technology收購了Numonyx,并將其整合為Micron的一部分。這一收購使Micron得以拓展其存儲技術(shù)領(lǐng)域的產(chǎn)