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NAND512R4A2CZA6F中文資料
NAND512R4A2CZA6F數據手冊規(guī)格書PDF詳情
Description
The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that
uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page
family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C
have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of
a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on
whether the device has a x8 or x16 bus width.
The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or
x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate
to other densities without changing the footprint.
To extend the lifetime of NAND Flash devices it is strongly recommended to implement an
Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000
program/erase cycles for each block. A Write Protect pin is available to give a hardware
protection against program and erase operations.
Features
● High density NAND Flash memories
– 512 Mbit memory array
– Cost effective solutions for mass storage applications
● NAND interface
– x 8 or x 16 bus width
– Multiplexed Address/ Data
● Supply voltage: 1.8 V, 3.0 V
● Page size
– x 8 device: (512 + 16 spare) bytes
– x 16 device: (256 + 8 spare) words
● Block size
– x 8 device: (16 K + 512 spare) bytes
– x 16 device: (8 K + 256 spare) words
● Page Read/Program
– Random access: 12 μs (3 V)/15 μs (1.8 V) (max)
– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)
– Page Program time: 200 μs (typ)
● Copy Back Program mode
● Fast Block Erase: 2 ms (typ)
● Status Register
● Electronic signature
● Chip Enable ‘don’t care’
● Serial Number option
● Hardware Data Protection
– Program/Erase locked during Power transitions
● Data integrity
– 100,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
● ECOPACK? packages
● Development tools
– Error Correction Code models
– Bad Blocks Management and Wear Leveling algorithms
– Hardware simulation models
供應商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
ST(意法) |
2511 |
9550 |
電子元器件采購降本 30%!盈慧通原廠直采,砍掉中間差價 |
||||
ST/意法 |
23+ |
20000 |
原廠授權一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
||||
ST |
04+ |
TSOP48 |
1570 |
全新原裝進口自己庫存優(yōu)勢 |
|||
ST |
17+ |
TSOP48 |
9988 |
只做原裝進口,自己庫存 |
|||
STMicroelectronics |
18+ |
ICFLASH512MBIT48TSOP |
6580 |
公司原裝現(xiàn)貨 |
|||
STM |
6000 |
面議 |
19 |
DIP/SMD |
|||
STMicroelectronics |
24+ |
48-TSOP |
56200 |
一級代理/放心采購 |
|||
SGS |
2447 |
SMD |
100500 |
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨 |
|||
STM |
20+ |
TSOP-48 |
1001 |
就找我吧!--邀您體驗愉快問購元件! |
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ST(意法) |
23+ |
NA |
20094 |
正納10年以上分銷經驗原裝進口正品做服務做口碑有支持 |
NAND512R4A2CZA6F 資料下載更多...
NAND512R4A2CZA6F 芯片相關型號
- 740-0032768-XXXXX
- FS-105-X
- HE-VTXO-10C1
- HG-2150CA
- M27C2001-20B1X
- M27C2001-20XL1X
- MGB-035S0DC
- MGB-038M5FC
- MGB-123S0DC
- MGB-128L5FC
- MGB-128M5FC
- MGB-245L5FC
- NAND04GR3B2DN1E
- NAND04GR3B4CN1E
- NAND08GR4B4CN1E
- NAND16GW3C2BZL6E
- NAND512R3A2CN6F
- NAND512W3A2CZA6F
- NE5534D
- RL-1288-47
- RL-1288-5.6
- RN50E10R0DR36
- SA5534AP
- SA5534P
- SMC064BFY6E
- SMC256AFY6E
- SMC512AFY6
- SMS064AFA5E
- SMS064BFA5E
- SMSXXXAF
Datasheet數據表PDF頁碼索引
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numonyx
Numonyx是一家曾經存在的存儲技術公司,于2008年由英特爾(Intel)和STMicroelectronics共同創(chuàng)立。Numonyx專注于非易失性存儲器(NVM)技術和閃存存儲器技術,為客戶提供各種存儲解決方案和產品。 Numonyx的產品包括閃存存儲器、嵌入式存儲器、非易失性存儲器等,在計算機、消費電子、通信、汽車等領域得到廣泛應用。公司致力于技術創(chuàng)新與研發(fā),不斷提升產品性能、可靠性和創(chuàng)新性,以滿足客戶不斷增長的需求。 2010年,美國存儲技術公司Micron Technology收購了Numonyx,并將其整合為Micron的一部分。這一收購使Micron得以拓展其存儲技術領域的產