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位置:NAND512R3A2CZA6F > NAND512R3A2CZA6F詳情

NAND512R3A2CZA6F中文資料

廠家型號(hào)

NAND512R3A2CZA6F

文件大小

1270.65Kbytes

頁(yè)面數(shù)量

51頁(yè)

功能描述

512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories

SLC NAND Flash Parallel 1.8V 512Mbit 64M x 8bit 15us 63-Pin VFBGA T/R

數(shù)據(jù)手冊(cè)

下載地址一下載地址二

簡(jiǎn)稱

NUMONYX

生產(chǎn)廠商

numonyx

中文名稱

官網(wǎng)

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NAND512R3A2CZA6F數(shù)據(jù)手冊(cè)規(guī)格書(shū)PDF詳情

Description

The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that

uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page

family. The NAND512R3A2C, NAND512R4A2C, NAND512W3A2C, and NAND512W4A2C

have a density of 512 Mbits and operate with either a 1.8V or 3V voltage supply. The size of

a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on

whether the device has a x8 or x16 bus width.

The address lines are multiplexed with the Data Input/Output signals on a multiplexed x8 or

x16 Input/Output bus. This interface reduces the pin count and makes it possible to migrate

to other densities without changing the footprint.

To extend the lifetime of NAND Flash devices it is strongly recommended to implement an

Error Correction Code (ECC). The use of ECC correction allows to achieve up to 100,000

program/erase cycles for each block. A Write Protect pin is available to give a hardware

protection against program and erase operations.

Features

● High density NAND Flash memories

– 512 Mbit memory array

– Cost effective solutions for mass storage applications

● NAND interface

– x 8 or x 16 bus width

– Multiplexed Address/ Data

● Supply voltage: 1.8 V, 3.0 V

● Page size

– x 8 device: (512 + 16 spare) bytes

– x 16 device: (256 + 8 spare) words

● Block size

– x 8 device: (16 K + 512 spare) bytes

– x 16 device: (8 K + 256 spare) words

● Page Read/Program

– Random access: 12 μs (3 V)/15 μs (1.8 V) (max)

– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)

– Page Program time: 200 μs (typ)

● Copy Back Program mode

● Fast Block Erase: 2 ms (typ)

● Status Register

● Electronic signature

● Chip Enable ‘don’t care’

● Serial Number option

● Hardware Data Protection

– Program/Erase locked during Power transitions

● Data integrity

– 100,000 Program/Erase cycles (with ECC)

– 10 years Data Retention

● ECOPACK? packages

● Development tools

– Error Correction Code models

– Bad Blocks Management and Wear Leveling algorithms

– Hardware simulation models

NAND512R3A2CZA6F產(chǎn)品屬性

  • 類(lèi)型

    描述

  • 型號(hào)

    NAND512R3A2CZA6F

  • 制造商

    Micron Technology Inc

  • 功能描述

    SLC NAND Flash Parallel 1.8V 512Mbit 64M x 8bit 15us 63-Pin VFBGA T/R

更新時(shí)間:2025-7-7 14:31:00
供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
ST
1923+
BGA
12008
原裝進(jìn)口現(xiàn)貨庫(kù)存專業(yè)工廠研究所配單供貨
NUMONY
16+
NA
8800
原裝現(xiàn)貨,貨真價(jià)優(yōu)
ST
16+
TQFP
4000
進(jìn)口原裝現(xiàn)貨/價(jià)格優(yōu)勢(shì)!
ST
1728+
VFBGA-63
6528
只做進(jìn)口原裝正品假一賠十!
ST
23+
FBGA
8560
受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣(mài)!
ST
2447
BGA
100500
一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期排單到貨
ST
23+
BGA
3000
原裝正品假一罰百!可開(kāi)增票!
ST/意法
23+
BGA
50000
全新原裝正品現(xiàn)貨,支持訂貨
ST/意法
24+
BGA
81
原裝現(xiàn)貨假一賠十
ST/意法
23+
BGA
20000
原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種

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numonyx

中文資料: 4590條

Numonyx是一家曾經(jīng)存在的存儲(chǔ)技術(shù)公司,于2008年由英特爾(Intel)和STMicroelectronics共同創(chuàng)立。Numonyx專注于非易失性存儲(chǔ)器(NVM)技術(shù)和閃存存儲(chǔ)器技術(shù),為客戶提供各種存儲(chǔ)解決方案和產(chǎn)品。 Numonyx的產(chǎn)品包括閃存存儲(chǔ)器、嵌入式存儲(chǔ)器、非易失性存儲(chǔ)器等,在計(jì)算機(jī)、消費(fèi)電子、通信、汽車(chē)等領(lǐng)域得到廣泛應(yīng)用。公司致力于技術(shù)創(chuàng)新與研發(fā),不斷提升產(chǎn)品性能、可靠性和創(chuàng)新性,以滿足客戶不斷增長(zhǎng)的需求。 2010年,美國(guó)存儲(chǔ)技術(shù)公司Micron Technology收購(gòu)了Numonyx,并將其整合為Micron的一部分。這一收購(gòu)使Micron得以拓展其存儲(chǔ)技術(shù)領(lǐng)域的產(chǎn)