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NAND01GR3B2BN5E中文資料
NAND01GR3B2BN5E數(shù)據(jù)手冊規(guī)格書PDF詳情
Features
■ NAND interface
– x8 or x16 bus width
– Multiplexed address/ data
– Pinout compatibility for all densities
■ Supply voltage: 1.8 V/3 V
■ Page size
– x8 device: (2048 + 64 spare) bytes
– x16 device: (1024 + 32 spare) words
■ Block size
– x8 device: (128K + 4K spare) bytes
– x16 device: (64K + 2K spare) words
■ Page read/program
– Random access: 25 μs (max)
– Sequential access: 25 ns (min)
– Page program time: 200 μs (typ)
■ Copy back program mode
■ Cache read mode
■ Fast block erase: 2 ms (typ)
■ Status register
■ Electronic signature
■ Chip enable ‘don’t care’
■ Security features
– OTP area
– Serial number (unique ID)
– Non-volatile protection option
■ Data protection
– Hardware block locking
– Hardware program/erase locked during
power transitions
■ ONFI 1.0 support
– Cache read
– Read signature
– Read
■ Data integrity
– 100,000 program/erase cycles per block
(with ECC)
– 10 years data retention
■ RoHS compliant packages
■ Development tools
– Error correction code models
– Bad blocks management and wear leveling
algorithms
– Hardware simulation models
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NUMONYX |
24+ |
BGA |
60000 |
||||
NUMONYX |
18+ |
BGA |
85600 |
保證進口原裝可開17%增值稅發(fā)票 |
|||
Numonyx/STMi |
23+ |
63-VFBGA |
65480 |
||||
Micron Technology Inc. |
21+ |
6-XBGA,FCBGA |
5280 |
進口原裝!長期供應(yīng)!絕對優(yōu)勢價格(誠信經(jīng)營 |
|||
Micron Technology Inc. |
24+ |
63-VFBGA(9x11) |
56200 |
一級代理/放心采購 |
|||
MICRON |
20+ |
BGA-63 |
1001 |
就找我吧!--邀您體驗愉快問購元件! |
|||
ST(意法) |
23+ |
NA |
20094 |
正納10年以上分銷經(jīng)驗原裝進口正品做服務(wù)做口碑有支持 |
|||
STM |
23+ |
BGA |
6000 |
原裝正品假一罰百!可開增票! |
|||
Micron |
22+ |
63VFBGA (9x11) |
9000 |
原廠渠道,現(xiàn)貨配單 |
|||
Micron Technology Inc |
23+/24+ |
63-TFBGA |
8600 |
只供原裝進口公司現(xiàn)貨+可訂貨 |
NAND01GR3B2BN5E 資料下載更多...
NAND01GR3B2BN5E 芯片相關(guān)型號
- 10313-C
- 1700000237
- EC002021
- EEEFK1V101XP
- MT250QL01GBBB8E12-0AITES
- MT250QL01GBBB8E12-0SATES
- MT250QL01GBBB8E12-0SITES
- MT250QL01GBBB8E14-0AITES
- MT250QL01GBBB8E14-0SATES
- MT250QL01GBBB8E14-0SITES
- NAND01GR3B2BN5F
- NAND01GR3B2BN6E
- NAND01GR3B2BN6F
- NAND01GR3B2BZA5E
- P10L
- P10L150SP
- P10L200SP
- P10L300D
- P10L300E
- P10L300SP
- P10L45SP
- P10L60SP
- VNT9271
- ZM-CH-T13L
- ZM-CH-T13R
- ZM-CH-T13T
- ZM-CH-T23-K
Datasheet數(shù)據(jù)表PDF頁碼索引
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numonyx
Numonyx是一家曾經(jīng)存在的存儲技術(shù)公司,于2008年由英特爾(Intel)和STMicroelectronics共同創(chuàng)立。Numonyx專注于非易失性存儲器(NVM)技術(shù)和閃存存儲器技術(shù),為客戶提供各種存儲解決方案和產(chǎn)品。 Numonyx的產(chǎn)品包括閃存存儲器、嵌入式存儲器、非易失性存儲器等,在計算機、消費電子、通信、汽車等領(lǐng)域得到廣泛應(yīng)用。公司致力于技術(shù)創(chuàng)新與研發(fā),不斷提升產(chǎn)品性能、可靠性和創(chuàng)新性,以滿足客戶不斷增長的需求。 2010年,美國存儲技術(shù)公司Micron Technology收購了Numonyx,并將其整合為Micron的一部分。這一收購使Micron得以拓展其存儲技術(shù)領(lǐng)域的產(chǎn)