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M29W160FBT80NSF中文資料
M29W160FBT80NSF數(shù)據(jù)手冊規(guī)格書PDF詳情
Description
The M29W160FT/B and M29W320FT/B are 16 Mbit (2 Mb x 8 or 1 Mb x 16) and 32 Mbit (4 Mb x 8 or 2 Mb x 16) non-volatile memories, respectively. They can be read, erased and reprogrammed. These operations can be performed using a single low voltage supply (2.5 to 3.6 V or 2.7 to 3.6 V for access time of 80 ns and 70 ns, respectively). On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.
The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental Program or Erase commands from modifying the memory. Program and Erase commands are written to the command interface of the memory. An on-chip Program/Erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents.
The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.
Features
■ Supply voltage
– VCC = 2.5 V to 3.6 V (access time: 80 ns) or 2.7 to 3.6 V (access time: 70 ns) for Program, Erase and Read
– VPP = 12 V for Fast Program (optional, available in the M29W320FT/B only)
■ Access time: 70, 80 ns
■ Programming time
– 10 μs per byte/word typical
■ Memory organization:
– M29W160FT/B: 35 blocks including 1 boot block (top or bottom location), 2 parameter blocks and 32 main blocks
– M29W320FT: 67 blocks including 1 boot block (top or bottom location), 2 parameter blocks and 64 main blocks
■ Program/Erase controller
– Embedded byte/word program algorithms
■ Erase Suspend and Resume modes
– Read and Program another block during Erase Suspend
■ Unlock Bypass Program command
– Faster production/batch programming
■ VPP/WP pin for Fast program and Write Protect (available in the M29W320FT/B only)
■ Temporary block unprotection mode
■ Common Flash interface
– 64 bit security code
■ Low power consumption
– Standby and Automatic Standby
■ 100,000 Program/Erase cycles per block
■ Electronic signature
– Manufacturer code: 0020h
– Top device codes
M29W160FT: 22C4h
M29W320FT: 22CAh
– Bottom device codes
M29W160FB: 2249h
M29W320FB: 22CBh
■ Automotive device grade 3:
– Temperature: –40 to 125 °C
– Automotive grade certified
■ TSOP48 package is ECOPACK?
M29W160FBT80NSF產(chǎn)品屬性
- 類型
描述
- 型號
M29W160FBT80NSF
- 制造商
NUMONYX
- 制造商全稱
Numonyx B.V
- 功能描述
16 Mbit or 32 Mbit(x 8 or x 16, boot block) 3 V supply Flash memory
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
---|---|---|---|---|---|---|---|
NUMONYX |
2016+ |
TSOP |
6528 |
只做原廠原裝現(xiàn)貨!終端客戶個別型號可以免費(fèi)送樣品! |
|||
Numonyx |
25+23+ |
TSOP48 |
55498 |
絕對原裝正品現(xiàn)貨,全新深圳原裝進(jìn)口現(xiàn)貨 |
|||
NUMONYX/ST |
20+ |
TSOP14 |
2960 |
誠信交易大量庫存現(xiàn)貨 |
|||
NUYX |
24+ |
48TSOP |
28500 |
授權(quán)代理直銷,原廠原裝現(xiàn)貨,假一罰十,特價銷售 |
|||
Micron |
200 |
||||||
NUM |
24+ |
768 |
|||||
Micron Technology Inc. |
24+ |
48-TSOP |
56200 |
一級代理/放心采購 |
|||
MICRON |
20+ |
TSOP-48 |
1001 |
就找我吧!--邀您體驗(yàn)愉快問購元件! |
|||
Micron |
22+ |
48TSOP |
9000 |
原廠渠道,現(xiàn)貨配單 |
|||
Micron |
23+ |
48-TSOP |
36500 |
原裝正品現(xiàn)貨庫存QQ:2987726803 |
M29W160FBT80NSF 資料下載更多...
M29W160FBT80NSF 芯片相關(guān)型號
- 55110-3L-02-C
- 55110-3M-02-C
- 55505-03-C
- 59020-I-U-04-A
- 59020-I-U-05-A
- 59021-I-S-05-A
- 59036X-T-02-C
- 59036X-T-03-C
- 59052-X-T-03-A
- 59052-X-U-03-A
- 59060-2-S-01-A
- LM4040C20IDBZT
- LM4040C20ILP
- M28W160CB100N6S
- M28W160ECB100N6S
- M29DW324DB70ZE6
- M29DW324DB90ZE6
- M29W160ET70N6
- M29W320DT70N6F
- M29W320DT90N6F
- M29W320EB70ZE1F
- M29W320ET90ZE1F
- M29W400DB55ZA1E
- M29W640FB70ZA6F
- M29W640GL60NB6E
- M29W640GL90NA6E
- M29W640GT60NB6E
- M36L0T7050B2ZAQT
- M95256-R
- MABA-007681-CT2010
Datasheet數(shù)據(jù)表PDF頁碼索引
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numonyx
Numonyx是一家曾經(jīng)存在的存儲技術(shù)公司,于2008年由英特爾(Intel)和STMicroelectronics共同創(chuàng)立。Numonyx專注于非易失性存儲器(NVM)技術(shù)和閃存存儲器技術(shù),為客戶提供各種存儲解決方案和產(chǎn)品。 Numonyx的產(chǎn)品包括閃存存儲器、嵌入式存儲器、非易失性存儲器等,在計算機(jī)、消費(fèi)電子、通信、汽車等領(lǐng)域得到廣泛應(yīng)用。公司致力于技術(shù)創(chuàng)新與研發(fā),不斷提升產(chǎn)品性能、可靠性和創(chuàng)新性,以滿足客戶不斷增長的需求。 2010年,美國存儲技術(shù)公司Micron Technology收購了Numonyx,并將其整合為Micron的一部分。這一收購使Micron得以拓展其存儲技術(shù)領(lǐng)域的產(chǎn)