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DESCRIPTION

The μPC1679G is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. Due to +13 dBm TYP. output at 1 GHz, this IC is recommendable for transmitter stage amplifier of L Band wireless communication systems. This IC is packaged in 8-pin plastic SOP. This IC is manufactured using NEC’s 20 GHz fT NESAT? IV silicon bipolar process. This process uses silicon nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

? Supply voltage : VCC= 4.5 to 5.5 V

? Saturated output power : PO(sat)= +15.5 dBm TYP. @ f = 500 MHz with external inductor

? Wideband response : fu= 1.8 GHz TYP. @ 3 dB bandwidth

? Isolation : ISL = 34 dB TYP. @ f = 500 MHz

? Power Gain : GP= 21.5 dB TYP. @ f = 500 MHz