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位置:NES1823P-100 > NES1823P-100詳情

NES1823P-100中文資料

廠家型號

NES1823P-100

文件大小

154.62Kbytes

頁面數(shù)量

20

功能描述

100W L-BAND PUSH-PULL POWER GaAs MESFET

數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

生產(chǎn)廠商

NEC

NES1823P-100數(shù)據(jù)手冊規(guī)格書PDF詳情

DESCRIPTION

The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear gain, high efficiency and excellent distortion. Its primary band is 1.8 to 2.3 GHz with different maching.

The device employs Tungsten Silicide gates, via holes, plated heat sink, and silicon dioxide and nitride passivation for superior performance, thermal characteristics, and reliability.

Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

? Push-pull type N-channel GaAs MESFET

? High Output Power : 100 W TYP.

? High Linear Gain : 11.0 dB TYP.

? High Drain Efficiency: 50 TYP. @VDS = 10 V, IDset = 6 A, f = 2.2 GHz

更新時間:2024-3-26 15:06:00
供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
NEC
2023+環(huán)保現(xiàn)貨
60000
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24+
244
現(xiàn)貨供應(yīng)
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8510
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OKI
6000
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19
QFP
WEANWE
2020+
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41
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MW/臺灣明緯
23+
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50000
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24+
NA/
41
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MEAN WELL
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41
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WEAN WE
24+
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80000
只做自己庫存 全新原裝進口正品假一賠百 可開13%增