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位置:NE960R200 > NE960R200詳情

NE960R200中文資料

廠家型號(hào)

NE960R200

文件大小

62.84Kbytes

頁(yè)面數(shù)量

12頁(yè)

功能描述

0.2 W X, Ku-BAND POWER GaAs MES FET

數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

生產(chǎn)廠商

NEC

NE960R200數(shù)據(jù)手冊(cè)規(guī)格書PDF詳情

DESCRIPTION

The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R200 and the NE960R200 are available in chip form. The NE960R200 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R275 is available in a hermetically sealed ceramic package. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

FEATURES

? High Output Power : Po (1 dB) = +25.0 dBm TYP.

? High Linear Gain : 10.0 dB TYP.

? High Power Added Efficiency: 35 TYP. @VDS = 9 V, IDset = 90 mA, f = 14.5 GHz

NE960R200產(chǎn)品屬性

  • 類型

    描述

  • 型號(hào)

    NE960R200

  • 制造商

    NEC

  • 制造商全稱

    NEC

  • 功能描述

    0.2 W X, Ku-BAND POWER GaAs MES FET

更新時(shí)間:2025-9-19 18:14:00
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NEC
23+
原廠封裝
13528
振宏微原裝正品,假一罰百
NEC
23+
SOT-23
26690
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NEC
25+
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18000
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NEC
24+
SOT-23
409
CEL
24+
原廠原封
4000
原裝正品
原廠
2023+
模塊
600
專營(yíng)模塊,繼電器,公司原裝現(xiàn)貨
24+
N/A
60000
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S/PHI
6000
面議
19
CDIP
CELESTICACO
24+
原裝進(jìn)口原廠原包接受訂貨
2866
原裝現(xiàn)貨假一罰十
NDK
DIP-5
35560
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