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MTP60N05HDL
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TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM
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MTP60N05HDL數(shù)據(jù)手冊(cè)規(guī)格書PDF詳情

TMOS POWER FET 60 AMPERES 50 VOLTS RDS(on) = 0.014 OHM

This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commuta tion modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

? Avalanche Energy Specified

? Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

? Diode is Characterized for Use in Bridge Circuits

? IDSS and VDS(on) Specified at Elevated Temperature

更新時(shí)間：2025-8-15 18:21:00
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MOTOROLA
2016+
TO-220
5254
只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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2447
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100500
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50000
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TO-220
22+
6000
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TO-220
6000
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10
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10
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TI
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30255
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8560
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