国产精品久久久久无码av色戒,大帝av在线一区二区三区,国产肥熟女视频一区二区三区,大陆少妇xxxx做受,被黑人猛躁10次高潮视频

General Description

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Features

■ N-Ch 3.8 A, 30 V, RDS(ON)=0.033W @ VGS=10 V

RDS(ON)=0.05 W @ VGS=4.5 V

P-Ch -2.7 A, -30 V,RDS(ON)=0.07 W @ VGS=-10 V

RDS(ON)=0.115 W @ VGS=-4.5 V.

■ Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities.

■ High density cell design for extremely low RDS(ON).

■ Exceptional on-resistance and maximum DC current capability.