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位置:M12L16161A-4.3T > M12L16161A-4.3T詳情

M12L16161A-4.3T中文資料

廠家型號

M12L16161A-4.3T

文件大小

566.07Kbytes

頁面數(shù)量

27

功能描述

512K x 16Bit x 2Banks Synchronous DRAM

數(shù)據手冊

下載地址一下載地址二

簡稱

ESMT晶豪科技

生產廠商

Elite Semiconductor Memory Technology Inc.

中文名稱

晶豪科技股份有限公司官網

M12L16161A-4.3T數(shù)據手冊規(guī)格書PDF詳情

GENERAL DESCRIPTION

The M12L16161A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

FEATURES

? JEDEC standard 3.3V power supply

? LVTTL compatible with multiplexed address

? Dual banks operation

? MRS cycle with address key programs

- CAS Latency (2 & 3 )

- Burst Length (1, 2, 4, 8 & full page)

- Burst Type (Sequential & Interleave)

? All inputs are sampled at the positive going edge of the system clock

? Burst Read Single-bit Write operation

? DQM for masking

? Auto & self refresh

? 32ms refresh period (2K cycle)

M12L16161A-4.3T產品屬性

  • 類型

    描述

  • 型號

    M12L16161A-4.3T

  • 制造商

    ESMT

  • 制造商全稱

    Elite Semiconductor Memory Technology Inc.

  • 功能描述

    512K x 16Bit x 2Banks Synchronous DRAM

更新時間:2025-8-21 9:12:00
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